1N4007GPE-E3/91

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Last Time Buy
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1000V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 1A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2µs
Current - Reverse Leakage @ Vr:	5µA @ 1000V
Capacitance @ Vr, F:	8pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Operating Temperature - Junction:	-65°C ~ 175°C

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<p>The 1N4007GPE-E3/91 is a rectifier diode of 1 Ampere Silicon Epitaxial planar type with an intensity of 97A peak. It is a high-speed switching diode and an extremely efficient one, important characteristics that allow it to be used in a variety of applications. Other key characteristics include low forward voltage drop, low switching and reverse recovery time, fast reverse recovery time and low leakage current. These traits make it an ideal choice for power supplies, satellite, LED and LED lighting applications.</p><p>The 1N4007GPE-E3/91 is a single P-N junction diode made from a piece of N-type semiconductor material with a P-type junction on the base. Its construction is based on an epitaxial growth process, which incorporates a thin epitaxial layer of P-type material between the N-type material and the substrate, thus forming a PN-junction. The reverse breakdown voltage is about 1000 volts, which is achieved by the lack of a parasitic “Junction Barrier Resistance” (JBR) between the N and the P sides of the junction.</p><p>In terms of its application field, the 1N4007GPE-E3/91 is used primarily in power supplies, solar cells, and uninterruptible power supplies (UPS). It is also suited for many automotive and consumer electronics applications, as well as supplying power for high-density memory chips. This diode can also be used in a variety of industrial power switching applications due its durability and high amperage ratings. The 1N4007GPE-E3/91 is also an efficient choice for switching and reverse recovery applications.</p><p>The working principle behind the 1N4007GPE-E3/91 is that of rectification. When direct current is passed through the diode, the current will flow in one direction only, while any current flowing in the opposite direction is blocked. This process occurs because within the junction of the PN-Diode, the electrons become attracted to the positively charged material. This \'squeezing\' action results in electrons becoming trapped between the junction and flowing in only one direction.</p><p>In addition to its other features, the 1N4007GPE-E3/91 has an extremely low forward voltage drop, which is a characteristic of a diode that allows a higher current to flow with minimal resistance. This characteristic allows the diode to minimize its power dissipated in order to reduce the amount of power needed for operation. In addition, the low voltage drop also eliminates additional DC losses, which results in increased efficiency.</p><p>Overall, the 1N4007GPE-E3/91 is an excellent choice for low-current and high-current applications due to its low forward voltage drop, high peak amperage rating and low leakage currents. The diode is a reliable and efficient choice for a wide range of applications, and its high speed switching capabilities are useful in multiple applications where fast response times are necessary. The 1N4007GPE-E3/91 is ideal for both commercial and industrial applications, especially when it comes to power supplies and uninterruptible power supplies.</p>

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