Allicdata Part #: | 1N4099UR-1-ND |
Manufacturer Part#: |
1N4099UR-1 |
Price: | $ 2.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | ZENER DIODE |
More Detail: | Zener Diode |
DataSheet: | 1N4099UR-1 Datasheet/PDF |
Quantity: | 1000 |
264 +: | $ 2.32518 |
Series: | * |
Part Status: | Active |
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1N4099UR-1 is a type of single Zener diode made by Vishay Semiconductors. It is a unidirectional electrically-controlled device with a nominal reference voltage between 5 and 30 volts. It is a general-purpose, low-leakage current device designed for use in a wide range of electronic applications, including DC-DC converters, power supplies, transistors, and optocouplers.
The primary application field of the 1N4099UR-1 is protection circuits. It can be used to protect sensitive electronic components from surge currents and overvoltage conditions. It can also be used in circuits which require the isolation of signals from their power supply. In addition, it is used in analog circuits for voltage regulation, such as the regulation of voltage references for A/D converters.
The working principle of the 1N4099UR-1 is based on the reverse breakdown voltage of the junction. The breakdown voltage is determined by the junction\'s dopant concentration profile and the electric field strength generated across the junction. When the voltage across the junction exceeds the breakdown voltage, a path is created between the electrodes of the diode, allowing current to flow in the reverse direction. This current is called the Zener or reverse breakdown current.
The 1N4099UR-1 has a wide operating temperature range from -65°C to +175°C, making it suitable for a variety of applications. It also has a maximum forward voltage drop of 1.1 volts and a maximum reverse leakage current of 10mA. Furthermore, it has an average power dissipation of 1.5 watts and a maximum current capability of 400mA.
In conclusion, the 1N4099UR-1 is a single Zener diode used in a variety of electronic applications, particularly those requiring protection from surge currents and overvoltage conditions. Its working principle is based on the junction’s reverse breakdown voltage and it has a range of attractive physical characteristics, such as a wide operating temperature range and a low forward voltage drop. These qualities make the 1N4099UR-1 an ideal choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
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1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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