1N4448TAP Allicdata Electronics

1N4448TAP Discrete Semiconductor Products

Allicdata Part #:

1N4448TAPGITB-ND

Manufacturer Part#:

1N4448TAP

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 75V 150MA DO35
More Detail: Diode Standard 75V 150mA Through Hole DO-35
DataSheet: 1N4448TAP datasheet1N4448TAP Datasheet/PDF
Quantity: 30000
10000 +: $ 0.01323
30000 +: $ 0.01191
50000 +: $ 0.01058
100000 +: $ 0.00992
250000 +: $ 0.00882
Stock 30000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
Speed: Small Signal =
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Description

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The 1N4448TAP is a small-signal diode designed to perform a single function in electronic devices. It is a type of diode commonly referred to as a switch diode, which has a characteristic curve that looks like a switch when reversed biased. The 1N4448TAP is an optimized version of a base 1N4448 model. The active elements of the 1N4448TAP are constructed in a hermetically sealed two-lead glass package. This type of diode is a single rectifier with a forward current of 50 mA and reverse voltage of 100 volts.

The main application of the 1N4448TAP diode is to protect circuits from being switched off due to variations in the supply voltage. This diode also functions as a rectifier, converting alternating current into direct current. This is a common function of diodes, but the 1N4448TAP is optimized to work more efficiently at higher voltages. It is commonly used in power supplies, instrumentation circuits, switching applications, and audio amplifiers.

The working principle of the 1N4448TAP is based on the behavior of electrons passing through its intrinsic semiconductor materials. When electrons pass through the diode, they are polarized towards the cathode, the negative terminal, and can only move from the anode to the cathode. When a negative voltage is applied to the diode, it is said to be reversed biased, and current does not flow through it. When a positive voltage is applied to the diode, it is said to be forward biased and current does flow through it.

In the case of the 1N4448TAP, when the voltage is applied in the forward direction, a small forward current can flow through the diode. This is referred to as a forward bias and is used to prevent the flow of energy from the power source. When a higher voltage is applied to the diode in reverse, the 1N4448TAP is capable of handling more than 100 volts and will restrict the current and protect components from excessive voltage.

The 1N4448TAP is designed to be used in a wide range of electronic applications, from power supplies and instrumentation to switching and audio amplification. Its optimized features make it an ideal choice for high voltage and current application designs. With its small size and reliable performance, the 1N4448TAP is an effective and cost efficient solution for many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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