
Allicdata Part #: | 1N4448WTRSMC-ND |
Manufacturer Part#: |
1N4448WTR |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE GEN PURP 75V 250MA SOD123 |
More Detail: | Diode Standard 75V 250mA Surface Mount SOD-123 |
DataSheet: | ![]() |
Quantity: | 1000 |
180000 +: | $ 0.00973 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 250mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 5µA @ 75V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Description
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1N4448WTR application field and working principle
The 1N4448WTR is a rectifier diode composed of a small signal signal diode and a Schottky diode. Due to its signal-rich, low forward voltage and high-reliability features, the 1N4448WTR usage is spreading under various applications. Used for rectification, voltage clamping, suppression, signal mixing and protection, this versatile device finds itself in industrial as well as consumer sectors.The 1N4448WTR is composed of a signal diode and a Schottky diode, both of which are integrated in a package. The signal diode is a PN junction diode, while the Schottky diode is a metal to semiconductor junction diode. The structure allows the device to function as two diodes in a single package. The device has a reverse blocking voltage of 40 volts and a forward voltage drop of 0.55 volts. It can handle up to 15 Amps of current and has a very low capacitance due to its small package size.When the device is forward biased, i.e cathode side is biased with +ve supply, current will travel from anode to cathode and it acts as a regular rectifier diode.When the device is reverse biased, i.e cathode side is biased with -ve supply, electrons present near the metal to semiconductor junction will form no depletion region, hence paths for current to flow from cathode to anode will remain open.The device acts as a voltage clamp under various applications. When the input voltage is higher than the operating voltage of the device, the 1N4448WTR takes over and performs its protection function. The device also has suppression properties. As a result, it is used to prevent undesirable electrical signals from entering or exiting the system, while blocking any further transmission of those signals.The combination of its two components, the signal diode and the Schottky diode, enable the 1N4448WTR to be used in signal mixing applications. Signals having different frequency can be mixed together and be used to get an output signal having frequency of the sum of the two input signals. Overall, due to its small size, high-reliability, low forward voltage, signal-rich and versatile features, the 1N4448WTR is used in a wide range of industrial as well as consumer applications.The specific data is subject to PDF, and the above content is for reference
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