1N4448W-HE3-08

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	75V
Current - Average Rectified (Io):	150mA
Voltage - Forward (Vf) (Max) @ If:	720mV @ 5mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	4ns
Current - Reverse Leakage @ Vr:	5µA @ 75V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	SOD-123
Supplier Device Package:	SOD-123
Operating Temperature - Junction:	-55°C ~ 150°C

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1N4448W-HE3-08 Application Field and Working PrincipleThe 1N4448W-HE3-08 is a single rectifier diode manufactured by Vishay Intertechnology Inc. It is mainly used for general purpose switching and signal control applications. Its maximum reverse voltage is 400V. Its peak forward current is 1.2A and its maximum continuous forward current is 250mA. Its power dissipation is 500mW. Its operating temperature range is -55 Celsius to +125 Celsius. It has an average rectified forward current (IF(AV)) of 250mA. The 1N4448W-HE3-08 is a general-purpose rectifier diode that rectifies electric current to direct current. It is mainly used for signal control, power supply, and motor drive applications. It is typically used for battery protection circuits and power adapters.A diode is a two-terminal component. Its purpose is to conduct current in only one direction. It achieves this by using a semiconductor p-n junction. Incident current flows through the forward-biased junction, and the opposite current direction is blocked. This is known as rectification.The forward voltage drop is the voltage that appears across the diode when it is conducting. This volt drop will depend on the temperature and on the current, and it usually ranges from 0.2 to 0.7V for a silicon diode. The reverse temperature coefficient of a diode is the rate of change in its forward voltage drop. As temperatures increase, the diode’s forward voltage drop decreases. The reverse leakage current for a diode is the current that passes through the diode in the opposite direction from the forward current. The 1N4448W-HE3-08 is constructed using silicon. It has a maximum forward voltage drop of 0.61V and a reverse leakage current of 10µA at 25 Celsius. The temperature coefficient is -2 mV/Celsius.The application field of 1N4448W-HE3-08 varies. It is used in power adapters and converters, light dimmer circuits, and battery protection circuits. It is also used as a freewheeling diode to prevent damage to components in sensitive circuits. In conclusion, the 1N4448W-HE3-08 is a single rectifier diode manufactured by Vishay Intertechnology Inc. It is mainly used for general purpose switching and signal control applications, and is constructed using silicon. It typically has a forward voltage drop of 0.61V, a reverse leakage current of 10µA, and a temperature coefficient of -2 mV/Celsius. The 1N4448W-HE3-08 is a versatile component that can be used in a range of applications, from power adapters to battery protection circuits.

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