1N4459 Allicdata Electronics
Allicdata Part #:

1N4459-ND

Manufacturer Part#:

1N4459

Price: $ 11.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 1KV 15A DO203AA
More Detail: Diode Standard 1000V 15A Chassis, Stud Mount DO-20...
DataSheet: 1N4459 datasheet1N4459 Datasheet/PDF
Quantity: 1000
100 +: $ 10.57080
Stock 1000Can Ship Immediately
$ 11.75
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Diodes - Rectifiers - Single

1N4459 is a single phase rectifier that is used for various applications. It is a member of the 4xx family and is designed for power rectification in electronic circuits. The common type of 1N4459 is a silicon avalanche Junction Diode, which is popular for its low forward voltage drop, high efficiency, soft recovery and reverse polarity protection.

Applications

1N4459 is mainly used to convert alternating current (AC) to direct current (DC). This process is known as rectification, hence the name rectifier diode, and it is a very important process in many electronic circuits. 1N4459 is thus mostly used in power supplies, inverters, converters, voltage multipliers and so on.

1N4459 can also be used in the protection circuits, such as the crowbar circuit, the clamp circuit, the shunt circuit and the flyback circuit. It can also be used to protect current-sensing and voltage-sensing circuits from overloading and reverse polarity.

Design

1N4459 is a diode designed for high-frequency power rectification. It has a low forward voltage drop and a high reverse breakdown voltage. Its maximum forward current rating is 3A, and its junction temperature can withstand up to 175°C. It also has an avalanche capability, which means it can support larger current surges than other types of diodes. Its package is a single-in-line (SIP) package with leads that make connections with ease.

Working Principle

1N4459 works on the principle of PN junction, which is the basis of a semiconductor device. PN junction is formed when two types of semiconductor materials, that is P and N are joined together. When a voltage is applied across the PN junction, the charge carriers flow from the P-type material to the N-type material and this flow of current is known as a diode current. This current is used to rectify the input AC voltage, converting it into DC voltage.

In 1N4459, the PN junction is formed by connecting a p-silicon to an n-silicon material. The P-silicon acts as the anode and the n-silicon acts as the cathode. The forward bias is applied across the diode and in this state, the diode is said to be conducting, allowing current to flow through it. Whereas, in the reverse biased state, the PN junction is not conducting, thus blocking current flow.

The specific data is subject to PDF, and the above content is for reference

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