Allicdata Part #: | 1N4475US-ND |
Manufacturer Part#: |
1N4475US |
Price: | $ 5.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE ZENER 27V 1.5W |
More Detail: | Zener Diode 27V 1.5W ±4.81% Surface Mount |
DataSheet: | 1N4475US Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 5.12795 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 27V |
Tolerance: | ±4.81% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 18 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 21.6V |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF |
Supplier Device Package: | -- |
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The 1N4475US is a diode belonging to the Zener series of diodes, more specifically belonging to the “Single” series. It is a single zone, 3-terminal device, with its anode (positive) terminal being connected to the substrate, its cathode (negative) terminal connected to the substrate and its central terminal being floated. It is designed to be used as a reverse-biased, low-voltage, low-current diode, as it exhibits low current leakage when reverse-biased. The 1N4475US diode has several applications. It can be used as a protective device against switching surge voltages, surges caused by lightning, over voltages caused by short-circuits or abnormal power source conditions, and much more. Additionally, the 1N4475US can be used for voltage voltage-regulating purposes when connected in “shunt” configuration, either with a resistor in series dimensions to limit the current, or with a voltage divider, typically made up of resistors, to shape the Zener voltage. The working principle of the 1N4475US diode is fairly simple. The diode’s Anode is connected to the power supply and its Cathode is connected to ground. When no current is flowing, the diode is said to be “reverse-bias”, and this creates an electric field between the Cathode/Anode terminals. When a certain voltage is applied across these two terminals, the electric field is strong enough to cause minority carriers in the semiconductor region of the diode, allowing current to conduct through it. The amount of current that conducts through the diode is determined by the reverse breakdown voltage the diode is able to maintain. The 1N4475US diode’s reverse breakdown voltage varies with temperature. As the diode’s temperature increases, its breakdown voltage also increases. This is known as the temperature coefficient of the diode; with the 1N4475US’s temperature coefficient being negative, meaning that its breakdown voltage decreases as the temperature increases. This characteristic makes the 1N4475US an ideal choice for temperature-dependent applications such as monitoring and controlling temperatures. Overall, the 1N4475US diode is a low-voltage, low-current diode, typically used for protection and voltage regulation. Its temperature coefficient is negative, making it ideal for temperature-dependent applications.
The specific data is subject to PDF, and the above content is for reference
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