1N4583AUR-1

The 1N4589AUR-1 is a single Zener diode specifically designed for reverse breakdown applications. It is a point-contact diode with a breakdown voltage of 9.1V at 10.5mA. The temperature coefficient is 0.2÷0.5%/C and the Zener impedance is typically 15Ω. The diode can handle peak pulses up to 1.5A.

The 1N4589AUR-1 is widely used in switching power supplies, automotive electronics, as well as medical and instrumentation applications. It is also an ideal choice for low-voltage, low-power applications such as in overvoltage protection circuits, voltage regulators, voltage level shifting, and polarity protection. Additionally, it can be used as a constant current source in analog applications.

The principle of operation for the 1N4589AUR-1Zener diode is based on two effects: minority carrier injection and avalanche breakdown. In minority carrier injection, current flows from the anode to the cathode, but some electrons from the anode are injected into the substrate, increasing the minority carrier concentration. This results in a across the junction, enabling current to flow. When the applied reaches a point where the avalanche breakdown occurs, more electrons are generated and current gain increases. This is when the flow exceeds the reverse breakdown point and the diode acts as a resistor. By controlling the, it is possible to build voltage regulation circuits with a high degree of accuracy.

The 1N4589AUR-1Zener diode is typically used in applications requiring low-cost, low-voltage, and low-power solutions. It is capable of withstanding peak currents up to 1.5A and has a temperature coefficient of 0.2-0.5%/C. it is commonly used in applications such as overvoltage protection, polarity protection, voltage level shifting, and as a current source for analog applications.