Allicdata Part #: | 1N4552B-ND |
Manufacturer Part#: |
1N4552B |
Price: | $ 22.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 5.1V 500MW DO5 |
More Detail: | Zener Diode 5.1V 500mW ±5% Chassis, Stud Mount DO-... |
DataSheet: | 1N4552B Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 20.32860 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 0.12 Ohms |
Current - Reverse Leakage @ Vr: | 20µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Base Part Number: | 1N4552 |
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The 1N4552B device is a single Zener diode that is used in electronic applications where the precision control of a Zener breakdown voltage is required. The working principle of the 1N4552B is based on the PN junction diode that is normally used as a rectifier in circuits. In a PN junction diode, the N-type semiconductor is in contact with the P-type semiconductor and the PN junction junction forms across these two regions. When forward-biased, the PN junction behaves like a closed circuit, allowing current to flow through the device. However, when the PN junction is reversed biased, the applied voltage creates a barrier across the PN junction.
The 1N4552B device uses the PN junction diode to create a Zener breakdown voltage. A high breakdown voltage is created when the applied reverse bias voltage exceeds the threshold of the breakdown voltage for the PN junction. As the reverse bias voltage exceeds the threshold of breakdown, the current through the PN junction increases exponentially. This form of breakdown is known as a Zener breakdown, and it is used in the 1N4552B to precisely control the breakdown voltage of the diode.
The 1N4552B device can be used in a variety of applications such as voltage regulation, voltage clamping, over-voltage protection, surge protection, and power switching. The 1N4552B device can also be used to implement voltage dividers and current limiters in circuit designs. In addition, the 1N4552B can be used to build voltage references and voltage multipliers, allowing the user to precisely control the voltage and current in a given circuit.
The 1N4552B device is a highly reliable and cost effective solution for precision voltage control applications. It is available in a wide range of breakdown voltages from 3.3V to 33V, and it can be used in temperatures ranging from -55°C to + 150°C. In addition, it has a maximum reverse recovery time of 10ns and a maximum reverse leakage current of 100mA, making it suitable for a wide range of applications.
The 1N4552B device is an excellent choice for applications requiring precision voltage control. It is available in a wide range of breakdown voltages and can operate in a wide range of temperatures. In addition, it has a fast reverse recovery time and a low reverse leakage current, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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