Allicdata Part #: | 1N4581A-1-ND |
Manufacturer Part#: |
1N4581A-1 |
Price: | $ 6.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.4V 500MW DO35 |
More Detail: | Zener Diode 6.4V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N4581A-1 Datasheet/PDF |
Quantity: | 28 |
1 +: | $ 6.30000 |
10 +: | $ 5.67063 |
25 +: | $ 5.16676 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 6.4V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 3V |
Operating Temperature: | -55°C ~ 100°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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The 1N4581A-1 is a single zener diode, which has simple and understandable application fields and working principles.
Application field
The 1N4581A-1 diode has numerous applications in variety of fields, including working as voltage regulator, voltage transistor, signal rectifier, and surge protector. As a voltage regulator, the zener diode is aptly suited for providing low output voltages of up to 5.6V for the power supply or circuit stabilization, or for the voltage adjustment of various signal or logic circuits. Additionally, when used as a signal rectifier in a signal generator, the diode is able to provide reliable signal purity, reducing signal interference.
When used as a voltage transistor, the 1N4581A-1 provides a stable, robust performance, allowing the use of both AC and DC signals. The diode also has a greater reverse power dissipation value than other traditional types of voltage transistors, allowing the device to operate at higher reverse voltage levels with the same output voltage. Finally, the surge protector feature of the diode ensures reliable transient protection on the power systems to ensure consistent power supply.
Working Principle
The 1N4581A-1 is comprised of two working sub-components: a reverse-biased PN junction, and a zener breakdown mechanism. The zener breakdown is a phenomenon that occurs at a certain breakdown voltage level, whereby the prohibited current will increase sharply in value. As the current increases, a voltage drop is built up on the zener diode that eventually equilibrates the voltage across the junction, thus moderating the current.
The zener breakdown mechanism was engineered to have a controlled breakdown voltage, which is determined by both the applied voltage as well as the reverse current. This is advantageous, as it helps reduce the risk of over-voltage and over-current in the system, protecting the circuit elements from excessive current or voltage values. Additionally, the reverse-biased PN junction creates a depletion region, which is used to store the electrons and holes when the current reaches the critical values. These electrons and holes are released back into the system when the current level drops, allowing normal operations to resume.
Conclusion
The 1N4581A-1 is a type of zener diode with a wide range of applications. Its simple and effective application fields include regulating voltage levels, working as a signal rectifier for signal generators, and performing as a surge protector for power systems. Furthermore, the device is composed of two working sub-components, namely, a reverse-biased PN junction and a zener breakdown mechanism that controls the current and voltage values within the system. The 1N4581A-1 diode is an invaluable part of many circuits, offering system stability and reliable performance in the long run.
The specific data is subject to PDF, and the above content is for reference
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