1N5223B

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	2.7V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	30 Ohms
Current - Reverse Leakage @ Vr:	75µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 200°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35
Base Part Number:	1N5223

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Introduction

1N5223B is a type of single-terminal zener diode with a breakdown voltage of 25 volts and system power rating up to 850 mW. It has a voltage regulation of 50 mV at 15 mA load current. This diode is available with Reverse Power Voltage 33V and low capacitance of 2.5 pF. It is also available in a surface mount package, making it an ideal platform for various applications.

Application Fields

1N5223B is widely used in various fields such as consumer electronics, automotive and industrial electronics. It can be used in analog and digital circuits to provide voltage regulation, and has excellent frequency stability and heat dissipation.Consumer electronics applications like flat-screen TVs, mobile phones, computer systems, and audio/video home entertainment systems all use 1N5223B zener diodes. They are also used in automotive applications like heavy-duty truck lights, airbag systems, engine control systems, and power windows. In industrial electronics, these diodes are used for voltage regulation in motor control systems, variable speed drives, and instrumentation systems. They are also used for over-voltage protection in photovoltaic solar inverters, switching power supply circuits, and telecom systems.

Working Principle

The 1N5223B is a PN junction diode, made of a lightly doped N-type semiconductor material with a high concentration of majority carriers and a heavily doped P-type material with a low concentration of majority carriers. When the diode is forward biased, the majority carriers in the N-type material, the electrons, move toward the P-type material, and the majority carriers in the P-type material, the holes, move toward the N-type material. This results in the flow of current across the junction. When the diode is reverse biased, the electric field applied to the junction opposes the current flow. Here, the zener effect occurs when the voltage applied to the junction is equal to or greater than the zener breakdown voltage of the diode. This occurs when the electric field is strong enough to cause the electrons to tunnel from the N-type material to the P-type material, allowing for a small current flow across the junction.

Conclusion

1N5223B is a single-terminal zener diode with a breakdown voltage of 25 volts and system power rating up to 850 mW. It has a wide variety of applications in consumer electronics, automotive, and industrial electronics. The working principle of 1N5223B is based on the PN junction diode, which works by taking advantage of the zener effect when a voltage greater than the breakdown voltage is applied to the diode.

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