1N5252B TR

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The 1N5252B TR is a single Zener diode. It is a silicon diode that functions by having a heavily doped p-n junction connected in reverse bias. This diode provides protection against an overvoltage in a circuit. Its robust construction enables it to handle high transient voltages in demanding conditions.

The 1N5252B TR is designed to offer low leakage at high temperatures and low dynamic impedance at higher frequencies, making it an ideal choice for a variety of applications. The device’s low cost, minimal package size, and lightweight construction further add to its value.

The device’s rated power dissipation is 1.5 W at a temperature of 25 °C. The device’s reverse breakdown voltage is 8.2 V, which makes it suitable for use in many low voltage applications. The Zener diode has an average forward current of 1.6 A at a junction temperature of 25 °C and a reverse current of 70 uA when the reverse voltage is equal to the firing voltage.

In its most common application, the 1N5252B TR diode is used to restrict the flow of current in a circuit. The device’s characteristics enable it to act as a voltage regulator, ensuring that the voltage in the circuit does not rise above a predetermined level. This limits the power supplied by the circuit, thereby protecting the other components.

The device can also be used to limit the current flow within a circuit. When a voltage is applied to the diode, it begins to conduct current, but only a certain amount. If the current exceeds a certain threshold, the diode becomes forward biased, which limits the current flow through the circuit. This prevents damage to the components of the circuit.

The device can also be used to protect sensitive components from damage due to high transient voltages. In this application, the 1N5252B TR reduces the voltage to a safe level by absorbing the excess energy when the transient voltage is applied to the circuit. The device can thus guard against the possibility of damage due to overexposure to high voltages.

The 1N5252B TR is also useful in RF control systems, where it prevents the RF signal from exceeding the set limit. This feature makes the device an ideal choice for controlling the signal level from antennas and transmitters.

The device’s characteristic of low dynamic impedance at higher frequencies also makes it ideal for use in high-speed data transmission applications, as it ensures that the signal remains within a certain limit. This prevents any and all interference from entering the data transmission line, thus ensuring the integrity of the data.

The device’s low price and robust construction make it an attractive choice for a wide range of applications. Its characteristic of providing low leakage at high temperatures, and its ability to limit both voltage and current levels are of great importance in high-reliability systems.

Overall, the 1N5252B TR is an excellent choice for a variety of applications. It offers excellent performance, ease of installation and integration, and reliable protection against overvoltage and overheating. Its characteristics make it an ideal choice for use in low voltage, current limiting, and RF control applications.

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