1N5224B_T50A Allicdata Electronics
Allicdata Part #:

1N5224B_T50A-ND

Manufacturer Part#:

1N5224B_T50A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 2.8V 500MW DO35
More Detail: Zener Diode 2.8V 500mW ±5% Through Hole DO-35
DataSheet: 1N5224B_T50A datasheet1N5224B_T50A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 2.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 75µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5224
Description

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The 1N5224B_T50A is a type of Zener diode and single junction diode. Zener diodes, also known as avalanche breakdown diodes, are designed to allow current to flow in one direction, with the voltage dropping across the device remaining constant even when the amount of current flowing across it increases.

This diode is primarily used to regulate the reverse bias voltage in a circuit, preventing it from fluctuating and damaging other components. It is often used in voltage regulator circuits and other power protection circuits, and is especially suitable for use in circuits where noise or surges must be suppressed. While the 1N5224B_T50A can be used in a variety of circuits, it is typically employed in systems that require stability, such as battery-powered systems, automotive systems and telecommunications systems.

The 1N5224B_T50A diode operates by the creation of an avalanche, or a state of breakdown, where electrons in the diode rapidly accelerate and cause a breakdown in the reverse voltage of the diode. This breakdown voltage is the desired output voltage of the diode and is determined by the zener voltage of the diode. The zener voltage is a result of the doping profile of the diode, with increased doping in the Junction region allowing for a higher breakdown voltage.

When the reverse voltage reaches the breakdown voltage of the diode, electrons begin to rapidly accelerate and current begins to flow through the diode in a process known as avalanche breakdown. The current flowing through the diode can then be controlled by increasing or decreasing the reverse voltage. The diode will maintain a reversed biased voltage of just above the breakdown voltage, ensuring the voltage is stable and consistent.

In addition to the 1N5224B_T50A, there are many other types of Zener and single junction diodes available for use in a variety of circuits. Zener diodes are designed to be especially useful in circuits with high-voltage transients and surges. Single junction diodes are applicable in many more applications and are more prevalent than Zener diodes. By controlling the forward voltage drop and reverse breakdown voltage, as well as other parameters such as power dissipation, these diodes can be used in almost any circuit configuration.

The 1N5224B_T50A is an example of a single junction diode with a specific application field and working principle. This diode can be used to protect circuits from voltage fluctuations and surges and is ideal for applications where noise or interferences must also be reduced. In addition to its specific use in a variety of circuits, this diode also provides a stable reverse biased voltage, allowing for the regulation of a voltage in a circuit.

The specific data is subject to PDF, and the above content is for reference

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