1N5224C-TR Allicdata Electronics
Allicdata Part #:

1N5224C-TR-ND

Manufacturer Part#:

1N5224C-TR

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 2.8V 500MW DO35
More Detail: Zener Diode 2.8V 500mW ±2% Through Hole DO-35
DataSheet: 1N5224C-TR datasheet1N5224C-TR Datasheet/PDF
Quantity: 1000
30000 +: $ 0.02117
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.8V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 75µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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1N5224C-TR are low power zener diodes commonly used in various applications and have a wide range of operating temperatures. They are specifically designed to provide protection against electrical surges and act as voltage intolerances in electrical circuits. These diodes have a low maximum power dissipation and breakdown voltages ranging from 2.4V to 200V.

The 1N5224C-TR diodes are three-terminal devices that contain a narrow band-gap material in an integrated package. The construction of these diodes is based on a semiconductor that limits the current flow in one direction. This allows them to act as a voltage regulator by creating a stable voltage reference in a circuit. It is this voltage regulation property that makes 1N5224C-TR diodes excel at power regulation in many applications.

One of the main advantages of 1N5224C-TR diodes is their low power dissipation. Due to their construction, they are able to dissipate very low levels of power while consuming a small amount of DC power. This makes them ideal for applications that require low noise, low levels of power consumption, or when a large voltage drop is required. This low power dissipation helps to keep the system power draw down and allows it to run much more efficiently.

1N5224C-TR diodes provide a range of operational characteristics that make them an ideal choice for voltage regulation applications. Their low maximum power dissipation makes them very efficient and allows them to be used in a wide range of operating temperatures. Additionally, the range of breakdown voltages they provide allows them to be used in a variety of voltage regulation applications. With their high breakdown voltage, they provide a simple solution for protecting against electrical surges while also maintaining a secure and stable voltage.

The working principle of 1N5224C-TR diodes is based on their PN-junction construction. When a voltage is applied to the diode, it causes current to flow across the PN junction. This current flow creates a depletion region near the junction and resists any further current flow in reverse. This phenomenon is called the Zener Breakdown and it is responsible for the voltage regulation property that the diodes provide.

1N5224C-TR diodes are commonly used in a wide variety of applications and are especially useful in portable electronics. Their low power dissipation makes them ideal for applications that require a small voltage drop and low levels of power consumption. Additionally, their voltage regulation capabilities make them ideal for applications such as power supplies, computers, and mobile devices. They are also used in circuit protection and voltage clamping.

In conclusion, the 1N5224C-TR diodes are a low power zener diode used in a wide variety of applications. They are specifically designed to provide protection against electrical surges and act as voltage regulators in electrical circuits. Their low power dissipation allows them to have a wide range of operating temperatures and breakdown voltages ranging from 2.4V to 200V. They are commonly used in electronics, power supplies, computers, and mobile devices. The working principle of these diodes is based on their PN-junction construction, which when a voltage is applied to the diode, causes current to flow across the PN junction and resist any further current flow in reverse. This phenomenon is called the Zener Breakdown and is responsible for the voltage regulation property.

The specific data is subject to PDF, and the above content is for reference

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