
Allicdata Part #: | 1N5242C-TR-ND |
Manufacturer Part#: |
1N5242C-TR |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 12V 500MW DO35 |
More Detail: | Zener Diode 12V 500mW ±2% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
30000 +: | $ 0.01799 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 9.1V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N5242C-TR is a zener diode, otherwise known as a voltage regulating device. It is designed specifically for use in a variety of power and signal applications, such as bypassing, clamping, rectification, and voltage regulation. As a result, it is one of the most versatile types of diodes available in the market today. It is also one of the most widely used types of diodes in the power electronics industry.
The 1N5242C-TR has a maximum breakdown voltage of 6.2V and a 5% tolerance. It is constructed using specially designed planar technology and epitaxial construction. It also has an internally compensated temperature coefficient (wide junction temperature range) and a maximum forward-voltage drop of 600mV.The device is designed in a four terminal SOT-32 surface-mount package and is available in a variety of options.
In terms of application field, the 1N5242C-TR is used in applications that require voltage regulation, such as in switching mode power supplies, low-voltage circuits, low-dropout regulators, voltage reference circuits, and voltage detection circuits. It is also suitable for RF circuits and switching applications. Additionally, the device can be used in sensitive circuits and DC-DC converters. This makes it suitable for a wide range of applications.
The 1N5242C-TR works on the principle of Zener breakdown. This means that as the reverse bias voltage (VZ) applied to the diode increases, the electric field strength between the junction p-n also increases. When the electric field between the junction exceeds the breakdown value, the junction breaks down and starts conducting current in the reverse direction, thereby regulating the voltage across it. This phenomenon is known as Zener breakdown.
The 1N5242C-TR can be used in both forward-biased and reverse-biased configurations. In the forward-biased configuration, a small current flows through the diode and helps to regulate the voltage across the diode. In the reverse-biased configuration, a large voltage is applied across the diode and the device conducts current in the reverse direction. This helps to regulate the voltage across it and also helps to clamp the voltage and protect the circuit from voltage spikes.
The 1N5242C-TR is an excellent choice for many power and signal applications. Its combination of features, such as its special planar technology and epitaxial construction, make it a great choice for many applications. It is also tolerant to high temperatures, has a low voltage drop, and is also available in a variety of options. All of these features make it an ideal solution for a wide range of power and signal applications.
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