1N5250B-TAP Allicdata Electronics
Allicdata Part #:

1N5250B-TAPGITB-ND

Manufacturer Part#:

1N5250B-TAP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 20V 500MW DO35
More Detail: Zener Diode 20V 500mW ±5% Through Hole DO-35
DataSheet: 1N5250B-TAP datasheet1N5250B-TAP Datasheet/PDF
Quantity: 20000
Stock 20000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 20V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 15V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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Diodes are semiconductor devices that can act as rectifiers, allowing electric current to flow through them in one direction, thereby enabling effective power conversion. Zener diodes, a form of diode, are specifically designed to regulate voltage. They allow the device to which they are connected to remain at a steady, predetermined level regardless of any temporary fluctuations in applied voltage. The 1N5250B-TAP is a Zener diode. This article will provide an overview of the application field and working principle of the 1N5250B-TAP.

The 1N5250B-TAP is used in a wide range of applications. In many cases, it is employed to minimise noise or static electricity in electronic systems. Its ability to provide a steady, predetermined level of voltage makes it ideal for such applications. The diode is also frequently used in power supplies and chargers to ensure that the voltage passing through the device remains within a safe range. Finally, the 1N5250B-TAP is also often used to minimize power dissipation or to protect sensitive electrical components from damage due to excessive voltage or current.

The 1N5250B-TAP is a type of metal-oxide semiconductor field-effect transistor (MOSFET). This technology allows the diode to provide a stable, predetermined voltage under various circumstances and conditions. Specifically, the diode allows for a steady, predetermined level of voltage to pass through even when the current level drops or changes. The 1N5250B-TAP is resistant to extreme temperatures, enabling the device to maintain a constant voltage when exposed to temperatures ranging from –55°C to +150°C.

The 1N5250B-TAP\'s working principle is based on the behaviour of free electrons. By controlling the number of free electrons, the device is able to regulate the voltage passing through it. This allows the device to maintain a constant, predetermined voltage regardless of any external influences or changes in applied voltage. The diode\'s structure also allows for an effective level of power dissipation, thus protecting the device and other components from damage due to high voltages.

In summary, the 1N5250B-TAP is a type of Zener diode. It is used in many applications, such as noise minimization and protection from power fluctuations. Its working principle is based on the behaviour of free electrons that allows the device to regulate voltage and provide a steady, predetermined level. The 1N5250B-TAP is also resistant to extreme temperatures, providing stable voltage levels even at –55°C to +150°C.

The specific data is subject to PDF, and the above content is for reference

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