1N5233BDO35E3 Allicdata Electronics
Allicdata Part #:

1N5233BDO35E3MSTR-ND

Manufacturer Part#:

1N5233BDO35E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 6V 500MW DO35
More Detail: Zener Diode 6V 500mW ±5% Through Hole DO-35
DataSheet: 1N5233BDO35E3 datasheet1N5233BDO35E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 6V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 3.5V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5233
Description

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Diodes - Zener - Single - 1N5233BDO35E3 application field and working principle

1N5233BDO35E3 is a type of diode, also known as a Zener diode, which is widely used in a variety of applications, such as voltage regulation, clamping and as part of Voltage-Dependent Resistors (VDRs). This article will discuss the application field and working principle of 1N5233BDO35E3.

Application field

1N5233BDO35E3 is widely used in different application fields. It can be used in voltage regulation circuits for stabilizing the output voltage of power supplies. It can also be used in clamping circuits for limiting the maximum voltage of a signal and preventing it from going outside its safe range. In addition, it is also used as a resistor in Voltage-Dependent Resistors (VDRs), which is an effective method of providing protection against surges and overvoltages.

1N5233BDO35E3 is also extensively used in a variety of other applications, such as temperature sensing circuits, reverse-bias protection circuits, signal rectification and noise suppression, logic level reference circuits and more.

Working principle

The basic principle of the 1N5233BDO35E3 is the flow of electric current from the anode to the cathode. Its structure consists of a cathode and an anode, which are separated by a lightly-doped layer of silicon. This layer has a high resistance that restricts the current flow. When a voltage is applied across the diode, it will become slightly forward biased and a small portion of current will flow from the anode to the cathode.

When the voltage increases further, a sudden increase in current will occur. This is referred to as the Zener Breakdown and is the basis of the diode’s working principle. The Zener Breakdown allows the diode to be used as a voltage regulator or as a clamping device, by limiting the maximum voltage within a certain range.

1N5233BDO35E3 is a popular diode due to its robustness and ability to handle significant voltage spikes without damage. This makes it an ideal choice for many applications, such as voltage regulation, clamping and Voltage-Dependent Resistors (VDRs).

The specific data is subject to PDF, and the above content is for reference

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