1N5226B

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The 1N5226B is a single zener diode, suitable for use in various different application fields. Its highly efficient working principle makes it an ideal choice for junctions where a breakdown voltage is needed for protection.

The 1N5226B has a maximum power dissipation of 350 mW and an operating temperature range of -65°C to +175°C. It has a zener voltage of 6.2V and an absolute maximum zener impedance of 5.0 mA. It is packaged in a 2-pin DO-35 case, making it suitable for surface mount applications.

One popular use of the 1N5226B is in low-voltage circuit protection. This is due to the fact that it provides a constant voltage across its junction. This can be used to protect a device from being damaged by an overvoltage that could be experienced when in contact with higher voltage circuits. The 1N5226B diode can be used to limit the voltage that is allowed to pass through the circuit.

The other common use of the 1N5226B is in the overvoltage protection circuit. This is due to the fact that it has a relatively low breakdown voltage. When a higher voltage is applied to the diode, the zener diode triggers a breakdown between the two nodes of the circuit and acts as a threshold switch. This causes the current to be limited, resulting in the excessive voltage being neutralized.

The working principle of the 1N5226B is based on a PN junction with a DBR structure. This DBR structure is what allows for the breakdown voltage to take place, thus providing the voltage regulation. A built-in reverse bias voltage is applied to the junction. When a treshold voltage is applied, an avalanche current will flow across the junction.

The 1N5226B also has a low reverse leakage current, making it highly efficient in terms of power usage. This ensures that the diode does not draw excessive power, so it can be used in a wide range of applications without worrying about power consumption.

In summary, the 1N5226B is a single zener diode with a high efficiency working principle which makes it ideal for junction protection when a breakdown voltage is needed. It is often used in low-voltage circuit protection circuits or overvoltage protection circuits, owing to its low breakdown voltage. Its PN junction with a DBR structure allows for the breakdown voltage to take place, while its low leakage current makes it highly efficient to use.

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