1N5226BE3

Series:	--
Part Status:	Active
Voltage - Zener (Nom) (Vz):	3.3V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	28 Ohms
Current - Reverse Leakage @ Vr:	25µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35 (DO-204AH)

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The 1N5226BE3 is a type of diode, in the category of single Zener diode. It is a small signal diode, used to create voltage reference biasing, rectification, and protection. The diode has the advantages of very low leakage and high breakdown voltage. This makes them suitable for use in a variety of applications, specifically in the context of reliable power switching.The 1N5226BE3 is a three terminal device with a 3.3 V Zener voltage and an average power rating of 500 mW. It has a low temperature coefficient of 7 PPM/C and a low voltage regulation of 15 mV. Additionally, the diode has an O-ring case and an encapsulation of silicone. This type of diode is surface-mountable and solderable.The working principle of the 1N5226BE3 is simple and complex, depending on what the diode is being used for. In terms of breakdown voltage, the diode uses avalanche breakdown to produce a reliable conduction at a low voltage. This is achieved by having a large number of electron-hole pairs that are generated near the junction, when the reverse bias voltage equals the diode\'s breakdown voltage. This high concentration of electron-hole pairs then create a large current, thus allowing for reliable conduction. In addition to breakdown voltage, the 1N5226BE3 can also be used for providing a reference voltage. This is achieved through a process known as Zener breakdown, where the reverse bias voltage has to exceed a certain amount. This triggers an avalanche breakdown, which then creates an increased concentration of electron-hole pairs. The increased concentration then results in a large voltage drop at the diode\'s junction, thus creating a reference voltage. The 1N5226BE3 can be used in a variety of applications. Some of the most common applications include, but are not limited to, voltage allying, RF limiting, current limiting, and temperature compensation. It can be used for transient voltage surge suppression, for regulating voltage ranges in medical devices, and for signal protection in microprocessors. It can also be used as a calibrating reference source in instrumentation, and for temperature control and compensation in semiconductor devices.In sum, the 1N5226BE3 is a single Zener diode, capable of performing a variety of functions related to voltage regulation, signal protection, surge suppression, and temperature control. The diode has a 3.3 V Zener voltage and an average power rating of 500 mW. It has a low temperature coefficient of 7 PPM/C and a low voltage regulation of 15 mV. Additionally, it can be easily surface-mounted and soldered to a known circuit. With its reliable breakdown voltage and reference voltage capabilities, the 1N5226BE3 can be used in a wide-range of applications.

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