1N5226BTR Discrete Semiconductor Products |
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Allicdata Part #: | 1N5226BFSTR-ND |
Manufacturer Part#: |
1N5226BTR |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 3.3V 500MW DO35 |
More Detail: | Zener Diode 3.3V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5226BTR Datasheet/PDF |
Quantity: | 10000 |
5000 +: | $ 0.01430 |
10000 +: | $ 0.01244 |
25000 +: | $ 0.01120 |
50000 +: | $ 0.00995 |
125000 +: | $ 0.00829 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.3V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 28 Ohms |
Current - Reverse Leakage @ Vr: | 25µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5226 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N5226BTR is a small signal Zener diode that comes equipped with multiple features that make it an ideal choice for a wide range of applications. It is commonly used in applications that require low power, reliable Zener Protection, such as audio and video and precision analog circuits. With its unique robust construction and small size, it is ideal for environments where space is limited. The 1N5226BTR diode also features good ESD protection and a low forward voltage drop, making it a versatile choice for voltage clamping applications.
The 1N5226BTR is designed for an operating junction temperature range of -65°C to +175°C. It is capable of operation over a wide variety of ambient temperature ranges, making it suitable for use in most conditions. In addition, the device is capable of withstanding sustained reverse and forward bias without the danger of breakdown, making it an ideal choice for applications in which the diode may be subjected to extreme fluctuations in temperature and electrical conditions.
The basic premise behind the 1N5226BTR diode is relatively simple: it works by clamping the voltage through a Zener breakdown effect. In this way, the diode creates a buffer zone to protect critical components from voltage spikes or electrical noise. The breakdown voltage of the 1N5226BTR can be customized according to the needs of the application, making it a highly versatile component.
The primary benefit of the 1N5226BTR diode is its ability to provide a reliable ESD protection. The diode’s unique construction and low forward voltage drop allow it to provide effective ESD protection in a small package. In addition, the 1N5226BTR’s low capacitance and high shunt resistance makes it a great choice for high speed datasheet applications, as it is able to handle large transient voltage and current quickly without risk of destruction. The diode can also be used in other signal protection applications, such as protection circuits and power monitoring, making it a versatile choice for a wide variety of applications.
The 1N5226BTR is a great choice for applications that require reliable, low-power Zener protection, ESD protection, or voltage clamping. Its small size and robust construction make it ideal for applications where space is limited, and its low capacitance and high shunt resistance make it a great choice for high speed datasheet applications. With its wide operating temperature range and ability to provide protection from voltage spikes and electrical noise, the 1N5226BTR is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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