1N5231B (DO-35) Allicdata Electronics
Allicdata Part #:

1N5231B(DO-35)-ND

Manufacturer Part#:

1N5231B (DO-35)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 5.1V 500MW DO35
More Detail: Zener Diode 5.1V 500mW ±5% Through Hole DO-35
DataSheet: 1N5231B (DO-35) datasheet1N5231B (DO-35) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5231
Description

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Diodes, and in particular Zener diodes, are one of the most fundamental components used in circuit design. The 1N5231B (DO-35) is a Zener diode manufactured by the Semtech Semiconductor Corporation and is the perfect example of this. This diode is a high performance, low cost, and reliable solution for a wide range of electronic applications. It is small enough to fit in any electronic device, and its two level tolerance (4.7 and 9.1V) makes it an ideal choice for a variety of voltage levels.

The 1N5231B (DO-35) is based on a very simple structure, consisting of a highly-doped P-type silicon substrate layer, a heavily-doped N-region, and a lightly-doped N+ region. This basic structure is one of the most common implementations of a Zener diode. Zener diodes are mainly used to regulate the breakdown voltage in high voltage circuits. When a voltage greater than the breakdown voltage is applied to the device, current flows through it, providing a constant voltage. This breakdown voltage is determined by the doping levels of the different layers, and by the relative widths of these layers.

In the case of the 1N5231B (DO-35), the breakdown voltage is determined by the doping level and width of the N+ layer. The heavier the doping of this layer, the higher the breakdown voltage; conversely, the narrower the width, the lower the breakdown voltage. The device has two tolerance levels (4.7 and 9.1V) with a power rating of 500mW, making it ideal for a variety of situations. The 1N5231B (DO-35) also has a small, low profile package, which makes it well-suited for a wide range of small, portable applications.

The 1N5231B (DO-35) is a Zener diode, and it has many possible applications in a variety of circuits. It can be used as a voltage regulator in voltage regulator circuits, in rectifier circuits to provide stable, regulated voltage levels, and even in audio and video circuits to control the voltage level of the signal. It can also be used in driving AC motors, in pulse-width modulation (PWM) circuits, and as part of a diode bridge in AC to DC conversion circuits. In all of these applications, the 1N5231B (DO-35) provides a reliable and efficient solution for regulating voltage levels.

In summary, the 1N5231B (DO-35) provides a reliable and versatile solution for voltage regulation with its two tolerance levels and small package size. By properly adjusting the doping levels and width of its N+ region, it can provide stable and regulated output voltage levels in a wide variety of applications. It is a reliable, low-cost solution that can be used in many different circuits, making it a great choice for any circuit designer looking for a reliable Zener diode.

The specific data is subject to PDF, and the above content is for reference

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