
Allicdata Part #: | 1N5237B(DO-35)-ND |
Manufacturer Part#: |
1N5237B (DO-35) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 8.2V 500MW DO35 |
More Detail: | Zener Diode 8.2V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.2V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 6.5V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5237 |
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1N5237B (DO-35) is a single zener diode, which is designed to accuriately maintain a zener breakdown voltage in a wide range of operating conditions. It is often used in many different applications, such as overvoltage protection, circuit-conditioning, and impedance-matching. This article will explain the application field and working principle of the 1N5237B (DO-35).
Application Field
1N5237B (DO-35) is mainly used in power supplies to protect against the dangerous effects of transient overvoltage and line transients. This type of diode is also capable of limiting the maximum voltage for semiconductor devices, helping to protect them from self-destructing under high voltage stress. Additionally, the diode can prevent damage to any connected components or the PCB. Furthermore, by connecting one or more 1N5237B to a circuit, the circuit’s impedance can be matched to ensure greater signal integrity and reliability. 1N5237B (DO-35) is widely used in automotive applications due to its ability to withstand abrupt changes in the power supply, such as starting up a vehicle engine or heavy acceleration. This type of diode also offers excellent ESD protection, acting as a reliable shield for the electronics in the car and preventing expensive damages to vital components. 1N5237B (DO-35) can also be used in medical device circuitry for the same protection function.
Working Principle
1N5237B (DO-35) works on the principle of Zener breakdown, which can be observed when the applied reverse-bias voltage of a diode becomes too high. At this voltage, the depletion layer at the junction of the P and N layers breaks down, allowing a high current across it and causing the diode to "breakdown".When reverse bias voltage increase, a point will be reached, known as the Zener breakdown voltage, when the electric field at the junction of the P and N layers is so strong that the depletion layer breaks down and current starts to flow. The larger the reverse-bias voltage is, the higher the zener breakdown voltage will be. The zener breakdown voltage of 1N5237B (DO-35) is typically 5.6V.
Furthermore, 1N5237B (DO-35) can handle up to 500mA of reverse-bias current and has a forward-bias voltage drop of 0.5V at 100mA. This type of diode is also very reliable and is capable of withstanding up to 500mW of power dissipation, allowing it to be used in many applications with absolute confidence.
In conclusion, 1N5237B (DO-35) is a single zener diode which is widely used in many applications, such as power supplies, automotive, and medical device circuitry. This type of diode works based on Zener breakdown and its zener breakdown voltage is typically 5.6V. Furthermore, 1N5237B (DO-35) is also very reliable and powerful, enabling it to provide great protection capability in many applications.
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