1N5238A (DO-35) Allicdata Electronics
Allicdata Part #:

1N5238A(DO-35)TR-ND

Manufacturer Part#:

1N5238A (DO-35)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 8.7V 500MW DO35
More Detail: Zener Diode 8.7V 500mW ±10% Through Hole DO-35
DataSheet: 1N5238A (DO-35) datasheet1N5238A (DO-35) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 8.7V
Tolerance: ±10%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5238
Description

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Diodes, especially Zener single, are a class of semiconductors that are frequently used in electrical and electronics systems. The 1N5238A (DO-35) is a typical example of a Zener single diode. It is designed to be used in wide range of applications and its construction is based on a small-signal junction transistor. The 1N5238A (DO-35) is commonly used in applications such as voltage regulation, voltage rectification, magnetic field protection and signal isolation.

The 1N5238A (DO-35) is made of N-type silicon semiconductors and is designed to perform a wide range of functions. It has the capability to regulate the voltage in high or low voltage circuits, thus providing a stable supply of current to the circuit. It also has the ability to rectify AC voltage, isolating adjacent circuits, and providing a stable voltage to all other components.

The 1N5238A (DO-35) is constructed as a two-terminal device and it includes two distinct layers. The base layer consists of two semiconductor layers, separated by a thin oxide layer. One side of the base layer is the P-type zone and the far side is the N-type zone. The top-layer of the 1N5238A (DO-35) is made of a dielectric layer and a metal layer. This formation prevents the movement of electric charges and provides an electrical insulation between the device and the surrounding environment.

The working principle of the 1N5238A (DO-35) is based on the voltage-dependent electrical conduction property of silicon gates. By changing the voltage across the 1N5238A (DO-35) base layer, the current that flows across the device is regulated. This helps to control the output voltage of the circuit, ensuring that it remains stable at all times. This voltage-controlling feature of the 1N5238A (DO-35) also allows it to be used as a voltage regulator in some high voltage circuits.

The 1N5238A (DO-35) is also useful for providing signal isolation. It can prevent signals from one circuit from interfering with the signals of another circuit by blocking the flow of electricity. It also prevents the reverse flow of electricity from leaving the circuit. This means that the signals in each separate circuit remain isolated from each other, ensuring that the circuits do not interact with each other.

In addition, the 1N5238A (DO-35) is also used in protection circuits. It helps to protect circuits from damage due to changes in voltage. It can also be used to protect circuits against magnetic fields and high voltage surges. This helps to minimize the risk of damage to sensitive electronic components caused by high voltage or magnetic interference.

The 1N5238A (DO-35) is a versatile device with a wide range of applications. It is used to regulate voltage, protect circuits, and provide signal isolation. Its working principle is based on the voltage-dependent electrical conduction property of silicon gates. This makes it an excellent choice for a wide range of applications and an important component for any electrical and electronics system.

The specific data is subject to PDF, and the above content is for reference

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