1N5238B-TP Discrete Semiconductor Products |
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Allicdata Part #: | 1N5238B-TPTR-ND |
Manufacturer Part#: |
1N5238B-TP |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 8.7V 500MW DO35 |
More Detail: | Zener Diode 8.7V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5238B-TP Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01191 |
30000 +: | $ 0.01072 |
50000 +: | $ 0.00953 |
100000 +: | $ 0.00893 |
250000 +: | $ 0.00794 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.7V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 6.5V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5238 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
When seeking a trustworthy, high-quality Zener diode with ultra-low on-state resistance and double diffusion characteristics for a range of applications, look no further than the 1N5238B-TP. This Zener diode is among the most reliable and reliable of its kind and is an excellent choice for any projects or tasks that require double diffusion characteristics and/or ultra-low on-state resistance.
The 1N5238B-TP belongs to a family of single-junction, low-voltage Zener diodes that are designed for use in a variety of applications, such as voltage regulation, voltage reproduction and transient suppression. As a Zener diode, the 1N5238B-TP utilizes the junction capacitance of two PN-junctions to produce a highly reliable Zener effect. This Zener effect allows the diode to regulate the voltage in a circuit to a nearly constant, stable level, which is usually below the rated breakdown voltage.
The 1N5238B-TP is made from a semiconductor material such as silicon, gallium arsenide and other compounds, which enable it to possess high breakdown voltages and low on-state resistance. It is also made with a double-diffusion process which provides the diode with greater and more reliable breakdown voltages, as well as excellent uniformity in the junction capacitance. This double-diffusion process also allows the diode to possess excellent temperature stability and low on-state resistances. The 1N5238B-TP is also constructed using gold-aluminum (Au/Al) selective plating on the anode side, which provides the diode with greater reliability and temperature stability.
As a single-junction, ultra-low on-state resistance diode, the 1N5238B-TP can be used in a wide range of applications, such as voltage regulation and control, voltage reproduction, audio/video signal reproduction, transient suppression, and signal detection. As a voltage regulator, the 1N5238B-TP can be used to regulate the voltage in any circuit to a stable, consistent level, below the rated breakdown voltage. This is accomplished by the Zener effect, which is created by the junction capacitance of two PN-junctions. This Zener effect helps to reduce EMI (electromagnetic interference) and increase the signal-to-noise ratio in applications such as audio/video signal reproduction.
As a voltage Reproducer, the 1N5238B-TP can be used to reproduce or amplify an existing signal without altering the original signal’s shape or characteristics. This makes it useful for a variety of applications such as signal detection, signal transmission, voltage recovery and voltagestabilization. As a transient suppression device, the 1N5238B-TP can be used to suppress electrical transients and surges that are caused by electrical and mechanical sources. This helps to protect vulnerable components such as ICs and electrical circuits from damage that may be caused by such transients.
In Conclusion, the 1N5238B-TP is a highly reliable, single-junction, low-voltage Zener diode that is designed for a number of different applications, such as voltage regulation and control, voltage reproduction, signal detection, signal transmission, and transient suppression. The diode is constructed using a double-diffusion process and utilizes the junction capacitance of two PN-junctions to produce a highly reliable Zener effect, which allows it to regulate the voltage in a circuit to a consistent, stable level that is usually below the rated breakdown voltage. The 1N5238B-TP also boasts excellent temperature stability and low on-state resistances due to its gold-aluminum (Au/Al) selective plating on the anode side. As such, this Zener diode is an excellent choice for any projects or tasks that require double diffusion characteristics and/or ultra-low on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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