
1N5242B Discrete Semiconductor Products |
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Allicdata Part #: | 1N5242B-ND |
Manufacturer Part#: |
1N5242B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 12V 500MW DO35 |
More Detail: | Zener Diode 12V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 35638 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 9.1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5242 |
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Diodes, such as Zener diode, are widely used in electronic circuits for a variety of purposes. The 1N5242B (or BZX55C5V6) is a popular choice for these application and has a variety of advantages that make it an attractive option for many designers. This article will discuss the application field and working principle of the 1N5242B.
Application Field
The 1N5242B is a popular choice for many application fields due to its relatively high breakdown voltage rating (5.6V). This voltage rating means that it can be reliably used in circuits with higher DC or AC circuit voltages. It is also often used in systems which require reverse polarity protection since it is able to withstand up to 9A without failure. These advantages make it ideal for a variety of applications such as power supplies, voltage regulators, and motor control systems.
In addition, the 1N5242B is well-suited for circuits that require precise voltage regulation. Its relatively low dynamic resistance means that it can provide precise voltage regulation even in noisy or rapidly changing environments. This makes it an attractive option for automotive systems, where precise voltage regulation can be necessary to ensure proper system operation.
The 1N5242B is also well-suited for use in audio systems. Its low-temperature coefficient means that it is able to regulate the audio signal more accurately than other types of diodes, which can reduce noise and distortion in the audio signal. This makes it a popular choice for audio systems.
Finally, the 1N5242B is also used in low voltage external power supply systems. It is well-suited for use in these applications due to its relatively high breakdown voltage rating, low temperature coefficient, and relatively low dynamic resistance.
Working Principle
The 1N5242B is a Zener diode, which means that it operates on a principle known as Zener breakdown. This type of breakdown occurs when a diode is placed in a circuit that is biased in the reverse direction, resulting in a small current flowing through the diode. This current then causes the diode to produce a relatively large electric field, which results in a decrease of the applied voltage across the diode.
The electric field within the diode causes an inversion layer to form at the surface of the diode, which prevents the voltage from increasing beyond the Zener breakdown voltage. This breakdown voltage is determined by the geometry of the diode and is a characteristic of the diode. The 1N5242B has a breakdown voltage of 5.6V.
Once the breakdown voltage of the 1N5242B is reached, the diode acts as a rectifier and begins to conduct current in both directions. This current is limited by the voltage rating of the diode. For example, the 1N5242B is rated to operate at up to 9A without failure.
The 1N5242B is widely used in circuits due to its relatively high breakdown voltage rating and low dynamic resistance. It is well-suited for applications such as power supplies, voltage regulators, motor control systems, audio systems, and external power supply systems. The working principle of the 1N5242B is based on the principle of Zener breakdown, which occurs when a diode is placed in a circuit that is biased in the reverse direction, resulting in a small current flowing through the diode and a large electric field within the diode. This electric field prevents the voltage from increasing beyond the breakdown voltage of the diode, which is determined by the geometry of the diode.
The specific data is subject to PDF, and the above content is for reference
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1N5231B_NT50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
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