1N5242BTA

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1N5242BTA is a low power Zener diode, available with nominal Zener voltage ranging from 3.9V to 91V. It belongs to a single diode subcategory, under the category of diodes and rectifiers.

The primary purpose of 1N5242BTA is to provide a stable voltage reference for applications in power supplies, precision voltage references, voltage regulators, wave suppressors, peak and clamp circuits, EMI filter installations, over voltage protection and snubber circuits.

Due to its range of stable reverse voltage capabilities, the 1N5242BTA is also suitable for logic level clamping, particularly in logic level shifters, wave shapers, clampers, back-end protection circuits, waveform generators and hysteresis comparators.

The 1N5242BTA working principle is based on a ‘pinched’ reverse breakdown process. This is achieved by introducing an impurity to the semiconductor material, typically silicon, which will in turn modify the electrical behaviour and affect the flow of electrical current.

It is these impurity centres that form Zener diode junction regions, where electrons from the p-type material can combine with holes from n-type material via a quantum tunneling effect in the reverse biased context.

The result of this process is a relatively predictable and geographically consistent electrical effect, enabling electrical engineers to predictably limit voltages to specific levels, a characteristic used in many electronics. By doing so, it also has the effect of limiting the power dissipation for reverse bias conditions, making it a suitable candidate for low power applications.

1N5242BTA also has excellent characterisation across wide temperature ranges, working down to -65°C and up to 175°C case temperature.

The device also includes marking codes to indicate the nominal Zener voltage on the case, with single exceptions available on request.

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