
Allicdata Part #: | 1N5246B_T50R-ND |
Manufacturer Part#: |
1N5246B_T50R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 16V 500MW DO35 |
More Detail: | Zener Diode 16V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 16V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 17 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 12V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5246 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
1N5246B_T50R application field and working principle
Introduction: The 1N5246B_T50R is a Zener Diode from Vishay Siliconix Series. It is a single type device which offers a reverse breakdown voltage of 8.2V. It has high voltage surge overload capabilities and comes in a package size of DO-201AD. It has a power rating of 500mW and a temperature coefficient of 5.4.
Application Field:
The 1N5246B_T50R is a widely used device in many electronics applications. It has been used in on-board power supplies, automotive power supplies, and battery chargers. It has been used in circuit converters, voltage detectors, and motor controllers. It is also used in timing control circuits and other general-purpose circuits.
Working Principle:
The 1N5246B_T50R operates on a simple principle. When a voltage potential is applied to its anode, a current will flow in the diode and it will be polarized in a forward direction. As the voltage exceeds the breakdown voltage of 8.2V, the current starts to increase rapidly, thus creating the Zener effect. This Zener effect allows the current to be limited to a desired level. The Zener effect also helps protect the circuit from voltage surges, thus making it ideal for many applications.
Conclusion:
The 1N5246B_T50R is a versatile and reliable device which is used in various electronics applications. It has a high voltage surge overload capability and offers a relatively accurate breakdown voltage of 8.2V. It has a power rating of 500mW and a temperature coefficient of 5.4. Thus, it can be seen that the 1N5246B_T50R is a valuable device for use in a wide range of electronics applications.
The specific data is subject to PDF, and the above content is for reference
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1N5246BTR | ON Semicondu... | 0.01 $ | 1000 | DIODE ZENER 16V 500MW DO3... |
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1N5231C-TAP | Vishay Semic... | 0.02 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
1N5245A (DO-35) | Microsemi Co... | 0.0 $ | 1000 | DIODE ZENER 15V 500MW DO3... |
1N5245A | Microsemi Co... | 1.5 $ | 1000 | ZENER DIODEZener Diode |
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1N5224B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 2.8V 500MW DO... |
1N5262BDO35 | Microsemi Co... | 0.0 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
1N5231B_NT50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 5.1V 500MW DO... |
1N5230B TR | Central Semi... | 0.05 $ | 1000 | DIODE ZENER 4.7V 500MW DO... |
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1N5223B A0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 2.7V 500MW DO... |
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