1N5251B TR

The 1N5251B TR is a single part, 3 watt, 5.1V Zener diode that can be used in a variety of applications. This part is ideal for use in low-voltage, portable, and personal electronics devices.

This Zener diode has a reverse breakdown voltage of 5.1V, and a maximum power dissipation of 3W at 25°C. The device has a maximum operating temperature of 175°C. The 1N5251B TR has a clamp current rating of 12.5mA, a reverse voltage breakdown of 5.1V, and a forward voltage drop of 1V.

The 1N5251B TR is useful for various applications such as voltage regulation, over-voltage protection, or voltage clamping. It may be used in power supplies, battery-powered devices, audio amplifiers, and signal protection circuits. The device can be used with operating temperatures that range from –55°C to +175°C.

This Zener diode works by allowing a current to flow through a silicon PN junction whenever a voltage is applied to it. This happens because the two terminals of the device are connected to two different types of semiconductor materials – one is of the N-type and the other is of the P-type. The two materials each contain holes and electrons. As current is applied to the junction the holes and electrons move towards each other in an attempt to form a low resistance path or “leakage current”. However, this current is limited by the “reverse bias” of the Zener diode, which clamps the voltage at the PN junction to a specific level.

To sum up, the 1N5251B TR is a 3 watt, 5.1V Zener diode that can be used in portable and personal electronics applications, and is ideal for low-voltage voltage regulation, over-voltage protection, and voltage clamping. It has a maximum power dissipation of 3 watts, a maximum operating temperature of 175°C, a forward voltage drop of 1V, and a reverse voltage breakdown of 5.1V. The device works by allowing a current to flow through the PN junction when a voltage is applied, and this current is then limited by the “reverse bias” of the Zener diode.