
Allicdata Part #: | 1N5253B_S00Z-ND |
Manufacturer Part#: |
1N5253B_S00Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 25V 500MW 5% DO-35 |
More Detail: | Zener Diode 25V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 25V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 19V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
When it comes to power semiconductor components, especially diodes, a wide variety of options exist on the market. Each component has its own unique specifications and abilities and the 1N5253B S00Z is no exception. This diode belongs to the Zener Single family, and it offers many advantages and benefits that other components in the same collection do not possess. This article will focus on the application fields and working principles of 1N5253B S00Z.
Applications of 1N5253B S00Z
The 1N5253B S00Z can be used for a number of different application fields. It is a good option for overvoltage protection, surge protection, overcurrent protection, and reverse battery protection. This diode is also a great option for applications that require high speed switching and low voltage noise. Additionally, 1N5253B S00Z can be utilized as a precision voltage regulator for sensitive electronics. Compared to other diodes in the same family, 1N5253B S00Z has a fairly low forward voltage drop which makes it a great choice for applications that require decreased power consumption.
Working Principles of 1N5253B S00Z
In simplest terms, a 1N5253B S00Z diode is constructed of two semiconductor materials, n-type and p-type, which facilitate the flow of current. When the positive voltage attains the breakdown reaches the breakdown voltage (Vz), the diode will allow the current to flow through. This breakdown occurs as a direct result of the temperature coefficient, meaning that the diode will increase in current-carrying capability as the temperature rises. This is why 1N5253B S00Z is desirable for high speed switching applications.
In operation, the diode begins to conduct forward current when the voltage begins to rise. In reverse conditions, the voltage at the cathode of the device must be substantially lower than the anode for it to conduct current in the reverse direction. It is important to note that 1N5253B S00Z diodes have a lower voltage drop than conventional diodes thanks to their Zener characteristic and this can be a great benefit in applications involving low power consumption.
1N5253B S00Z are generally in quite small packages which make them ideal for tight spaces and dense designs. They come with a variety of wattages and storage capabilities and are quite reliable when properly used. Additionally, these diodes offer great thermal cycling and shock resistance.
Conclusion
In conclusion, 1N5253B S00Z diodes are an incredibly versatile device designed for use in a variety of applications. They are a great choice for surge and overvoltage protection, as well as reverse battery protection. They offer a reduced forward voltage drop and great thermal cycling and shock resistance. It is important to remember, however, that the diode will only function if voltage at the anode exceeds that of the cathode.
The specific data is subject to PDF, and the above content is for reference
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