1N5253C-TAP

Series:	Automotive, AEC-Q101
Packaging:	Tape & Box (TB)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	25V
Tolerance:	±2%
Power - Max:	500mW
Impedance (Max) (Zzt):	35 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 19V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are essential elements in electrical circuits, providing switching and protection for various components. The 1N5253C-TAP diode, manufactured by Central Semiconductor, is particularly useful and versatile in many electrical systems. This diode falls under the category of Zener, single, and is commonly used for a variety of applications. This article outlines the application field of 1N5253C-TAP, and the operating principles of this diode.1N5253C-TAP is a voltage-regulated diode with a wide range of applications. It is designed to continuously regulate a high voltage and features a relatively low dynamic resistance. This makes it an ideal choice for use in high-voltage applications, such as in power supplies, voltage regulating systems, and surge protectors. It is also often used in medical and industrial equipment, as it provides high stability and reliability.The 1N5253C-TAP diode has a variable breakdown voltage, which can range from 4.7V to 200V. This permits its use in voltage regulators, as it offers great flexibility in adjusting the output voltage. The diode can be operated in temperatures ranging from -50°C to 150°C, and its maximum DC power dissipation is 500mW. Its peak reverse voltage is 500V, and its maximum reverse current is 8µA.Moreover, 1N5253C-TAP has a low temperature coefficient and a sharp reverse characteristic, making it perfect for use in temperature compensators. This diode is also suitable for use in spot-welders and surge limiters, where it offers excellent voltage regulation capabilities. Its low forward-voltage drop and high surge current capability make it suitable for use in power supplies.The operation of the 1N5253C-TAP diode is based on a degradation of the concentration of carriers in its PN junction. Generally, its operation begins with a PN junction where the depletion layer of majority carriers is thick. When a voltage is applied to the diode, electrons and holes are attracted across the junction, reducing the size of the depletion layer in the PN interface. The width of the depletion layer and the resistance of the junction change significantly with reverse voltages and temperatures. The 1N5253C-TAP diode can operate up to a certain working voltage UZ, where due to thermal agitation and collisions, the current density J is too low to cause any significant flow of carriers. The diode is consequently in a breakdown state, which does not depend on UZ. Once the applied voltage is greater than UZ, the current J exceeds a certain value and the PN junction starts to conduct current.In conclusion, the 1N5253C-TAP diode has a wide range of applications in various power-related products. It has a large dynamic resistance and low temperature coefficient, making it an ideal choice for use in voltage regulator systems and surge protectors. It features a variable breakdown voltage, as well as a high surge current capability and a low forward voltage drop. Its operating principle is based on the degradation of the concentration of carriers in its PN junction.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description