1N5256B-TR Discrete Semiconductor Products

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The 1N5256B-TR is a Zener diode, a type of diode designed for operation in the reverse breakdown region of its operation. This diode is designed to provide a known voltage drop at a given level of current, making it an essential component in the design of power management and voltage regulation circuits.

The 1N5256B-TR has been designed to operate with a maximum rated power dissipation of 500 mW and can handle peak nearby the power of this when it’s in junction with the zener. This diode has a breakdown voltage of 5.1 V, with a maximum rated current of 500 mA. When the applied voltage reaches the Zener voltage levels, the current amplitude through the diode remains almost constant, regardless of any variation in the applied voltage above breakdown.

The 1N5256B-TR is used in applications where a controlled or regulated voltage drop is desired. This diode is often used for voltage regulation in power supplies, for example, allowing expected levels of output voltage in the presence of increasing variations of input voltage. Due to its low power dissipation, the diode is popular for use in devices such as laptops and other portable devices.

In addition to providing regulated voltage drops, the 1N5256B-TR is also often used for noise filtering or voltage isolation, due to its low leakage current ratings. This diode is also used to prevent over-voltage damage in circuit designs, as the device will limit the current in the event of an over-voltage event.

The 1N5256B-TR diode is a relatively straightforward design, relying on a simple dopant profile for reliable performance. A single N-type implant forms the PN junction, which is then reverse biased in order to obtain the breakdown voltage. This junction follows the general behavior seen in typical Zener diodes, which is characterized by a balanced system of breakdown and depletion regions. When the applied voltage reaches the Zener voltage levels, the current through the diode will remain almost constant, regardless of any increase in applied voltage above the Zener breakdown.

The 1N5256B-TR diode, being a component designed for reverse breakdown voltage regulation, can be used in a variety of applications. In power management and voltage regulation circuits, the diode ensures the reliability and accuracy of the system. Additionally, when coupled with other noise filtering components, the device can provide additional protection and isolation, shielding delicate circuits from potential hazards. With its simple, reliable design, and its wide range of applications, the 1N5256B-TR is an ideal component for designing powerful and efficient power management circuits.

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