1N5257B_T50A Allicdata Electronics
Allicdata Part #:

1N5257B_T50A-ND

Manufacturer Part#:

1N5257B_T50A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 33V 500MW DO35
More Detail: Zener Diode 33V 500mW ±5% Through Hole DO-35
DataSheet: 1N5257B_T50A datasheet1N5257B_T50A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5257
Description

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1N5257B_T50A, a member of the 1N5xxx series of Zener diodes, is an economical and general-purpose device developed by NXP. It is a three-terminal, single-zener diode that is ideal for a variety of applications that require low voltage regulation. The diode’s unique construction, reliable performance and its small size make it especially suitable for general-purpose applications, such as RF attenuation, voltage clamping, ESD protection, and more.

1N5257B_T50A devices provide a low, 5 V Zener voltage with a maximum 5 mA current rating. The output voltage regulation is rated at +/- 7.5 %. The maximum power rating is 500 mW maximum. The breakdown voltage is 5.5V-6.5V. The total capacitance is 0.10000 pF. And the PIV rating is 15.6 V.

1N5257B_T50A is well suited for a variety of applications in commercial as well as industrial electronics. These applications include temperature compensation and instrumentation, RF attenuation and impedance matching, voltage clamping and ESD protection. In addition, 1N5257B_T50A can be used to provide overvoltage protection, current limiting, and regulation in consumer electronics, telecommunications, automotive, computer, and other electronics.

The working principle of 1N5257B_T50A is relatively simple. When a forward bias is applied to the diode, the primary current flows from anode to cathode. This causes the depletion region to broaden (negative resistance). At a certain forward voltage, the Zener breakdown voltage is reached, which results in a rapid increase of current flow. The current increases exponentially until the voltage across the diode reaches its reverse breakdown voltage, which sets the maximum voltage regulation value of the diode.

1N5257B_T50A diodes are especially suitable for applications that require low voltage regulation. Due to their high performance, small size, and high reliability, 1N5257B_T50A devices are increasingly being used in a variety of commercial and industrial applications.

In summary, 1N5257B_T50A is versatile, reliable and economical three-terminal, single-zener diode that is suitable for low voltage regulation applications. It is ideal for temperature compensation and instrumentation, RF attenuation and impedance matching, voltage clamping and ESD protection, overvoltage protection, current limiting, and regulation. 1N5257B_T50A devices are well suited for a variety of applications in commercial as well as industrial electronics.

The specific data is subject to PDF, and the above content is for reference

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