
Allicdata Part #: | 1N5257BCSTR-ND |
Manufacturer Part#: |
1N5257B TR |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 33V 500MW DO35 |
More Detail: | Zener Diode 33V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.04614 |
30000 +: | $ 0.04316 |
50000 +: | $ 0.03969 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 58 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 25V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N5257B Zener Diode is an ideal choice for many different applications. Its high-temperature rating, low on-state resistance, low noise, and break down voltage tolerance make it suitable for applications in a wide range of temperatures and voltages. Moreover, its compact packaging makes it suitable for industrial designs, automotive designs, and others.
In terms of electrical characteristics, 1N5257B is a low-current, low-voltage Zener diode. Its maximum reverse voltage is 40V, and its reverse current is 25 to 40mA. Similarly, its forward voltage is rated between 0.4 to 0.7V and its power handling capacity is 0.1 watts. Its features make it an ideal choice for various electronics and automotive applications.
The 1N5257B TR is one of the more popular types of Zener diodes since its prominent working principle. In general, it is a voltage-regulating diode that passes current in both directions, much like traditional diodes, but it behaves differently in reverse bias. Essentially, when reverse biased, a Zener diode has a lower than normal reverse voltage drop and this make them ideal for use in voltage-regulated circuits.
To understand the working principle of the 1N5257B TR better, consider a typical example. When the diode is forward biased, the electrons in the p-type material are attracted to the positive voltage applied to the anode and move through the diode to the anode. This flow leads to a forward current, and it is due to the depletion layer created by the voltage applied to the diode.
On the other hand, when the same diode is reverse biased, the depletion region at the junction becomes thicker and prevents electrons from passing through the diode. However, the voltage applied to the diode is greater than the breakdown voltage, the electrons start to break down the depletion layer, allowing a current to flow. This current is typically much lower than the forward current and is typically limited to about 10mA.
The 1N5257B TR is a high-performance Zener diode with numerous applications. It is frequently used in voltage-regulating, low-noise, low-power, and long-term tolerance applications. It can also be used in applications requiring a reliable high-temperature and low forward-voltage drop, such as in automotive applications. Additionally, the diode is also suitable for applications demanding a wide range of temperatures and voltage tolerance, such as in industrial and consumer products.
In summary, 1N5257B TR is a low-current, low-voltage Zener diode that is reliable, with a wide range of applications. Its features make it a popular choice for electronic and automotive designs, and it is especially useful in circuits where a high breakdown voltage, low on-state resistance, and low noise are required. The diode is easy to use, with a compact package that can fit in tight spaces.
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