
Allicdata Part #: | 1N5263BTR-ND |
Manufacturer Part#: |
1N5263B TR |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 56V 500MW DO35 |
More Detail: | Zener Diode 56V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.05947 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Voltage - Zener (Nom) (Vz): | 56V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 150 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 43V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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The 1N5263B is a single Zener diode classified in the family of diodes. This specific diode is typically used in either of two ways, which are clamping or voltage regulation applications. It serves the purpose of keeping a voltage level under control, whether above or below its Zener breakdown level of 5.6 volts.
Application Field of 1N5263B
The basic purpose of the 1N5263B single Zener diode is to fill in a number of different voltage clamping and voltage regulation applications. It features two different capacitors and a protection diode that act together in the function of clamping services and protection. The protection diode is designed with a single narrow band gap to enhance its small power dissipation characteristics that are then used to control the circuit. It is recommended for applications such as line protection, to prevent transient voltages from entering, and voltage regulation, to keep the voltage level constant.
Working Principle of 1N5263B
Minimal operation of a Zener diode is made possible by injecting the electrons into the PN junction, which is what happens in the 1N5263B Zener diode. The electrons are free to move through the device because of the small width of the junction. The electrons attempt to combine with the positive ions in the N side of the junction, forming a single unit. The particular voltage at which the electrons combine and move from the PN junction is called the breakdown voltage. The concept of breakdown voltage is intricate and is based on several parameters, such as doping levels and junction width. Therefore, the breakdown voltage of each individual diode can differ by a small amount and should be considered when using it for a specific application.
The 1N5263B is different from other Zener diodes in that it has a higher reverse breakdown voltage that allows it to be used in circuits requiring an additional clamp. In theory, the 1N5263B can withstand up to 5.6 volts before breakdown. This means that it can provide reliable protection and voltage regulation in circuits with complex and sensitive components.
Conclusion
The 1N5263B TR is a single Zener diode specifically designed for use in applications requiring voltage regulation and line protection. Its main benefits include its capability of withstanding up to 5.6 volts and its enhanced small power dissipation characteristics. Its ideal applications involve circuit protection, voltage regulation, and line protection.
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