
Allicdata Part #: | 1N5263C-TR-ND |
Manufacturer Part#: |
1N5263C-TR |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 2.2A 56V DO35 |
More Detail: | Zener Diode 56V 500mW ±2% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
30000 +: | $ 0.01799 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 56V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 150 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 43V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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Diodes - Zener - Single
The 1N5263C-TR device is a single Zener diode commonly used in point-of-load (POL) applications, usually in applications below 2A. It operates by relying on the soft breakover of a diode in its reverse breakdown region, which is also called the Avalanche Breakdown region.
In a forward-biased diode, electrons start to flow from the anode to the cathode when the forward voltage reaches the threshold value of a diode. The current increases exponentially as the forward voltage increases. When the reverse voltage is applied to the diode, the device starts to break down in the reverse direction at the Zener voltage.
The 1N5263C-TR device has a breakdown voltage of 5.3V, with an operating current of 59mA (max). The total power dissipation of the device at Tj=25ºC is 500mW. Additionally, the diode has a temperature coefficient of -1.1mV/°C, which allows it to keep its breakdown voltage relatively stable across various temperatures.
The 1N5263C-TR Zener diode is used in low current applications and because of its property of maintaining a relatively stable breakdown voltage. Under reverse voltages below the Zener breakdown, the device exhibits a very low reverse current. It is typically used in voltage regulation circuits and voltage reference circuits, as well as in ESD protection circuits.
The 1N5263C-TR can also be used in reverse polarity protection. Its high current capacity allows it to handle short burst pulses of applied direct current, making it a popular choice for manufacturers requiring ruggedness and reliability in their products.
In summary, the 1N5263C-TR is a single Zener diode mainly used in point-of-load (POL) applications, such as voltage regulation circuits, voltage reference circuits, ESD protection circuits and reverse polarity protection circuits. It has a breakdown voltage of 5.3V and an operating current of 59mA, with a total power dissipation of 500mW at Tj=25ºC. Additionally, the device has a temperature coefficient of -1.1mV/°C, which allows it to keep its breakdown voltage relatively stable across various temperatures.
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