1N5273B BK Allicdata Electronics
Allicdata Part #:

1N5273BBK-ND

Manufacturer Part#:

1N5273B BK

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE ZENER 120V 500MW DO35
More Detail: Zener Diode 120V 500mW ±5% Through Hole DO-35
DataSheet: 1N5273B BK datasheet1N5273B BK Datasheet/PDF
Quantity: 1000
2500 +: $ 0.20718
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Series: --
Part Status: Last Time Buy
Voltage - Zener (Nom) (Vz): 120V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 900 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 91V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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1N5273B BK Application Field and Working Principle: Diodes are electronic devices that allow current to flow in one direction whilst preventing the flow of current in the other direction. Zener Diodes, also known as Voltage Regulation Diodes, are a special type of diode that have individual characteristics which make them more suitable for certain applications than general-purpose diodes. Zener diodes are generally placed in parallel with a circuit under test and act as a clamp to protect the circuit from excessive voltage and current. The 1N5273B BK is a special type of zener diode specifically designed to protect circuits against electrical shorts when exposed to large voltages or surges. The 1N5273B BK is a single zener diode, which can be connected in series or parallel with a circuit or other device. The device comprises of a bipolar semiconductor diode, and is designed to work in a state of avalanche breakdown, meaning the diode automatically switches to a high-current flow when it exceeds a particular voltage. This is due to the electric field created by the electrons in the semiconductor material, which causes the electric field to break down when the electrons are unable to pass through due to the high voltage. The 1N5273B BK has a breakdown voltage of 5.1 V, a rated power of 500 mW, and a maximum reverse current of 1 mA. These characteristics are extremely important when considering the application of the device, as they all affect how the diode functions, and hence how effective the device is in protecting against voltage surges and shorts. The 1N5273B BK is typically used in power supplies, and is better suited for circuits that require lower power supplies than its general-purpose diode counterparts. The working principle of the 1N5273B BK is relatively simple. When the voltage on the anode side exceeds a certain threshold, the electrons in the semiconductor material are unable to pass through and hence an electric arc is created. This arc triggers the device to switch to a high current and clamp the voltage to a safe level, protecting the circuit from shorts and excessive voltage. In conclusion, the 1N5273 BK is an effective and specialized diode that can be placed in series or parallel with other devices to protect them from voltage surges or shorts. The device has a breakdown voltage of 5.1 V, a rated power of 500 mW, and a maximum reverse current of 1 mA, which are all important factors in its application. The 1N5273B BK is typically placed in power supplies, and works by automatically switching to a high-current state when the voltage increases beyond an acceptable threshold, clamping the voltage to a safe level.

The specific data is subject to PDF, and the above content is for reference

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