
Allicdata Part #: | 1N5281BTR-ND |
Manufacturer Part#: |
1N5281B TR |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 200V 500MW DO35A |
More Detail: | Zener Diode 200V 500mW ±5% Through Hole DO-35A |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.30870 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Voltage - Zener (Nom) (Vz): | 200V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 2.5 kOhms |
Current - Reverse Leakage @ Vr: | 100nA @ 152V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35A |
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Diodes are an essential part of both analog and digital circuits and are used to control the flow of electric current. Among the various types of diodes, Zener diodes can be used to regulate the voltage level within a circuit and is commonly used in high-voltage switching applications. The 1N5281B TR is a single Zener diode specially designed for high power applications. This diode has a variety of uses, depending on its application field and working principle.
Application Field
The 1N5281B TR is designed for high power applications and is mainly used as a voltage regulating diode in switching power supplies and DC/DC voltage converters. It is also used for protecting circuits from surges, shorts, and overvoltages, as well as providing overvoltage protection in high voltage switching applications. In addition, it can also be used as a voltage reference in temperature compensation and feedback control systems.
Working Principle
The 1N5281B TR is a single Zener diode with a breakdown voltage of 9.1V, making it suitable for high-voltage applications. The breakdown voltage, also known as the Zener voltage, is the voltage at which the diode starts to conduct reverse current in a given circuit. This directory is designed to operate over a wide range of temperatures, from -65°C to +175°C. It also has a very fast switching time and is suitable for use in high-frequency systems.
The structure of the 1N5281B TR consists of a p-type and an n-type semiconductor materials arranged in reverse-right angles. This arrangement makes the diode very effective as a voltage regulator. When a positive voltage is applied to the diode, the p-type material becomes more negative and the n-type material more positive, creating a depletion region across the diode junction. This causes the current to be limited to the reverse direction, leading to a regulated voltage output.
The 1N5281B TR is a high power Zener diode ideal for high-voltage switching applications. It has a breakdown voltage of 9.1V and is designed to operate over a wide temperature range. This diode can be used as a voltage regulator, surge protector, short circuit protection, overvoltage protection and reference voltage device. It has a very fast switching time and is able to handle high power applications.
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