1N5366CE3/TR8

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1N5366CE3/TR8 is a common type of single Zener diode, which is widely used in power management and general applications. This diode is usually made of doped silicon and has an epitaxial construction. It is also designed to protect circuit components from electrostatic discharge. This diode can be used in temperature-sensitive circuits, as it has operating temperature range of -55° to +150°C.

The 1N5366CE3/TR8 diode features a maximum constant current rating of 1A and a Zener voltage range of 3.3 V to 12 V. It also has a Zener impedance of around 6 Ω at IZT and a leakage current of around 30 µA at 5 V. Due to its unique structure, 1N5366CE3/TR8 has fast response time and low power dissipation.

1N5366CE3/TR8 is mainly used for applications that require accurate voltage regulation and protection from high currents, such as for protecting the nodes of digital circuits, for surge protection, and for stabilizing the operating voltage in various power supplies. It can also be used to reduce the ripple voltage in voltage regulator circuits, as well as to control sudden voltage drops.

The working principle of 1N5366CE3/TR8 is mainly based on the breakdown voltage, also known as Zener voltage, of the diode. When a voltage higher than the Zener voltage is applied to the diode, the diode breaks down and the current of the diode increases sharply due to the internal avalanche effect. This increase in current allows the diode to maintain the voltage above the Zener voltage. The exact functioning of the diode depends on the type of device and the application.

In summary, 1N5366CE3/TR8 is a convenient and cost-effective single Zener diode that can be used for a wide range of power management and general applications. It has a Zener voltage range of 3.3 V to 12 V, a maximum constant current rating of 1A, and a Zener impedance of about 6 Ω. It features low power dissipation, fast response time, and also helps in reducing the ripple voltage in voltage regulator circuits.

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