1N5358E3/TR12 Allicdata Electronics
Allicdata Part #:

1N5358E3/TR12-ND

Manufacturer Part#:

1N5358E3/TR12

Price: $ 1.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 22V 5W T18
More Detail: Zener Diode 22V 5W ±20% Through Hole T-18
DataSheet: 1N5358E3/TR12 datasheet1N5358E3/TR12 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.22598
Stock 1000Can Ship Immediately
$ 1.37
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 22V
Tolerance: ±20%
Power - Max: 5W
Impedance (Max) (Zzt): 3.5 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 15.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5358
Description

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The 1N5358E3/TR12 is a 4.7V voltage regulator diode manufactured by Microsemi. It is ideal for use in power supply lines, communications links, and other electronic systems. It is a Zener diode that limits the reverse voltage across it to a predetermined value, preventing the voltage from exceeding that value, thus protecting the other components in the system from being damaged.

The 1N5358E3/TR12 is characterized by a low zener voltage of 4.7V, with a maximum zener current of 2.0mA when under a rated load current, no load current and a maximum reverse voltage of 5.6V. It has a maximum breakdown voltage of 5.6V, a maximum reverse current of 7mA, and a maximum capacitance of 5pF between the anode and cathode.

The 1N5358E3/TR12 has a variety of applications across a wide range of industries. It is commonly used in power supply lines to protect components from power surges and spikes. It is also used in communications links, to regulate the amount of voltage passing through, and to protect the system from drawing too much power. It can be used in other electronic systems, such as automotive electronics, and consumer electronics, to limit the voltage that passes through, preventing damage or malfunction.

The 1N5358E3/TR12 works by limiting the reverse voltage across it to a predetermined level. It consists of a junction of two different semiconductor materials, such as silicon and germanium, that are carefully constructed to form a reverse-biased diode. When the voltage across the diode exceeds the predetermined level, the diode "breaks down" and allows the current to flow. This prevents the voltage from exceeding the predetermined value and damaging the other components in the system.

The 1N5358E3/TR12 is an ideal solution for power regulation and voltage protection. It is optimized for low current and low voltage applications, with a low breakdown voltage and a low maximum zener current of 2.0mA. With its wide range of applications, it is ideal for use in a variety of industrial, automotive, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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