Allicdata Part #: | 1N5352E3/TR13-ND |
Manufacturer Part#: |
1N5352E3/TR13 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 15V 5W T18 |
More Detail: | Zener Diode 15V 5W ±20% Through Hole T-18 |
DataSheet: | 1N5352E3/TR13 Datasheet/PDF |
Quantity: | 1000 |
1250 +: | $ 0.49877 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 15V |
Tolerance: | ±20% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 2.5 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 10.8V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5352 |
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1N5352E3/TR13 is a Single Zener diode from the 1N535X family. This family of Zener diodes is designed for use in industrial applications requiring a continuous low-impedance circuit for current protection and for voltage regulation applications. The electrical characteristics of these diodes are such that they provide good performance in the most demanding applications. This individual Zener diode has a 1.2-2.0V zener breakdown voltage, and a maximum power dissipation of 2W. This diode can operate at a junction temperature of up to 175C and has a maximum reverse breakdown voltage of 10A.
1N5352E3/TR13 is a general purpose Single Zener diode typically used in industrial applications such as power supplies, voltage regulators, protection circuits, signal conditioning circuits and motor control. Due to its high breakdown voltage, it is also suitable for applications that require a high level of voltage regulation.
The virtual construction and working principle of the 1N5352E3/TR13 are the same as that of a conventional diode. When the diode is forward biased, the majority carriers (holes and electrons) will drift from the n-type material towards the p-type material. This creates an electric field in the junction, resulting in a current flow when a forward bias voltage is applied. In the reverse biased mode, there is an electric field from the p-type material to the n-type material, resulting in a barrier potential (built-in potential). When the reverse voltage exceeds a certain threshold, the barrier potential is cancelled out and the diode enters into a mode of reverse current flow.
One of the main characteristics of Zener diodes is its ability to operatively maintain a fixed reverse breakdown voltage independent of variations in current level or temperature. Zener diodes operates in reverse bias mode and its fixed breakdown voltage is determined by the N-type and P-type materials in the diode junction. This breakdown voltage can be set by the manufacturer during production. The 1N5352E3/TR13 has a reverse breakdown voltage of 1.2-2.0V and a maximum power dissipation of 2W.
The 1N5352E3/TR13 is used in a wide variety of applications such as voltage monitoring, current limiting, voltage regulating and protection circuits. This Zener diode can be used as a voltage reference in op-amps and comparator circuits, as well as in diode logic circuits. It is also commonly used in switching power supplies, motor controls and signal conditioning circuits. Due to its stable voltage reference, this diode is ideal for use in automotive and other industrial applications that requires a high level of voltage regulation.
The 1N5352E3/TR13 is a Zener diode that can provide a low-impedance circuit for current protection and for voltage regulation applications. It has a breakdown voltage of 1.2-2.0V and a maximum power dissipation of 2W. This single Zener diode is suitable for use in industrial applications such as power supplies, voltage regulators, protection circuits, signal conditioning circuits and motor control. It can also be used as a voltage reference in op-amps, comparator circuits and diode logic circuits.
The specific data is subject to PDF, and the above content is for reference
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