1N5334BE3/TR8 Allicdata Electronics
Allicdata Part #:

1N5334BE3/TR8-ND

Manufacturer Part#:

1N5334BE3/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 3.6V 5W T18
More Detail: Zener Diode 3.6V 5W ±5% Through Hole T-18
DataSheet: 1N5334BE3/TR8 datasheet1N5334BE3/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 2.5 Ohms
Current - Reverse Leakage @ Vr: 150µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5334
Description

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Diodes are electric components that allow current to pass from a negative voltage (anode) to a positive voltage (cathode). Zener diodes are specialized types of diodes that allow current to flow even in the opposite direction (from the cathode to the anode) and are known as Zener reverse breakdown. In this article, we explain the application field and working principle of 1N5334BE3/TR8, which is a single Zener diode.

Application Field of 1N5334BE3/TR8

The 1N5334BE3/TR8 is a semiconductor device which is commonly used in the design of power supplies and linear voltage regulators which operate over a wide range of operating temperature. It has a wide operating voltage range of 6V to 200V while its power dissipation rate can withstand up to 500mW. It also comes with a high peak current rating, which makes it ideal for applications that require fast switching speed and surge current protection.

Working Principle of 1N5334BE3/TR8

When using the 1N5334BE3/TR8, the working principle is the Zener reverse breakdown. Basically, when the diode is forward biased, it acts as a simple rectifying diode and lets current flow from the anode (negative voltage) to the cathode (positive voltage). On the other hand, when the reverse breakdown voltage is exceeded, the diode acts as a voltage regulated device, allowing current to flow opposite to the normal direction (from the cathode to the anode) and creating a stable voltage drop that is determined by the Zener breakdown voltage.

The Zener diode is constructed by having a heavily doped p-type region in contact with the n-type region and hence creating a voltage stability effect by having a reverse biased junction. This series of p-type regions and n-type regions is known as depletion layers and they act as a barrier limiting the flow of current from the anode to the cathode. When a voltage higher than the breakdown voltage is applied, the depletion layers will get disrupted and allow current to flow from the cathode to the anode. This process is known as Zener breakdown, or Zener reverse breakdown.

In addition to the above, the 1N5334BE3/TR8 has a temperature coefficient that is suitable for a range of applications. Its temperature coefficient is a lower value of 63mV/°C, which helps in reducing drift in the VZ voltage over a wide temperature range and providing an enhanced level of stability.

Conclusion

In conclusion, the 1N5334BE3/TR8 is a single Zener diode which is suitable for many applications due to its wide operating voltage range and high peak current rating. Its low temperature coefficient helps to maintain VZ voltage over a wide temperature range. Additionally, its working principle of Zener reverse breakdown provides functionality that simple rectifying diodes don’t have, such as creating a stable voltage drop.

The specific data is subject to PDF, and the above content is for reference

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