| Allicdata Part #: | 1N5335BGOS-ND |
| Manufacturer Part#: |
1N5335BG |
| Price: | $ 0.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE ZENER 3.9V 5W AXIAL |
| More Detail: | Zener Diode 3.9V 5W ±5% Through Hole Axial |
| DataSheet: | 1N5335BG Datasheet/PDF |
| Quantity: | 2159 |
| 1 +: | $ 0.29610 |
| 10 +: | $ 0.23877 |
| 100 +: | $ 0.16235 |
| 500 +: | $ 0.12177 |
| 1000 +: | $ 0.09132 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 3.9V |
| Tolerance: | ±5% |
| Power - Max: | 5W |
| Impedance (Max) (Zzt): | 2 Ohms |
| Current - Reverse Leakage @ Vr: | 50µA @ 1V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
| Operating Temperature: | -65°C ~ 200°C |
| Mounting Type: | Through Hole |
| Package / Case: | T-18, Axial |
| Supplier Device Package: | Axial |
| Base Part Number: | 1N5335 |
Description
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The 1N5335BG is a single Zener diode designed for use in reverse breakdown and voltage clamping applications. It is a single Zener diode composed of a single p-n junction, typically used to protect circuits from overvoltage conditions.
In such applications, the device is reverse biased and the reverse voltage is more than the rated voltage of the diode. The power dissipation rating indicates how much power the 1N5335BG can handle safely and inversely determines the amount of current that can flow through it.
In applications with AC mains, the peak voltage is quite higher than the nominal voltage. As such, the 1N5335BG offered with a maximum power dissipation of 500 mW is a suitable choice, as it can absorb large transient voltage spike without entering breakdown region, and it also provides good stability.
The 1N5335BG can be employed in polarity protection circuits, surge protection (in AC or DC) circuits and voltage regulator circuits. It is also used in a variety of battery chargers, cellular telephone handsets, fax machines and data systems, consumer electronics, and industrial control systems.
The working principle behind the 1N5335BG is based on the fact that when a reverse bias voltage is applied to its anode and the Cathode, a potential difference is created, which causes a large current to start flowing. This current is sufficient to increase the voltage across the diode enough to cause a breakdown, which can then be used for a variety of purposes, such as voltage clamping.
When the reverse voltage is removed, the diode returns to its non-conducting state, blocking the flow of current. Hence, the 1N5335BG is an excellent device for protecting sensitive electronic components from high surge voltages.
In addition to voltage clamping, the 1N5335BG can also be used in various other applications, such as current limiting and frequency-dependent voltage control. By placing the diode in series with a resistor, it can be used as a voltage limiter. On the other hand, by using the diode in parallel or shunt with a capacitor, it can be used to control the frequency of a signal. In other words, the 1N5335BG is a multi-purpose component, which can be used in an almost limitless number of situations.
In summary, the 1N5335BG is a single Zener diode that can be used for reverse voltage breakdown and voltage-controlled current management. It is suitable for use in polarity protection, surge protection and voltage regulator circuits. Furthermore, the diode can also be used for frequency-dependent voltage control, where it provides excellent stability and power dissipation.
The specific data is subject to PDF, and the above content is for reference
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1N5335BG Datasheet/PDF