1N5398G B0G

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	800V
Current - Average Rectified (Io):	1.5A
Voltage - Forward (Vf) (Max) @ If:	1V @ 1.5A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	5µA @ 800V
Capacitance @ Vr, F:	15pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AC, DO-15, Axial
Supplier Device Package:	DO-204AC (DO-15)
Operating Temperature - Junction:	-55°C ~ 150°C

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Diodes - Rectifiers - Single 1N5398G B0G is a low-cost, high-speed, high-current Schottky barrier diode. It has a TO-92 package and the anode connection is towards the base of the package. The 1N5398G B0G diodes have a maximum reverse breakdown voltage of 250V and a forward current of 6A. The applications of the 1N5398G B0G diodes are diverse, due to their low cost, wide operating temperature range and high current capacity. They can be used as rectifiers, voltage multipliers, switches, in switching mode power supplies and voltage regulators. The 1N5398G B0G diodes are also sometimes used as active components in oscillators, such as Schottky barrier mixers. The working principle of the 1N5398G B0G diodes is based on the Schottky barrier effect. The Schottky barrier effect occurs when a thin metal film is deposited on a semiconductor material. The thin metal film has a much lower work function than the semiconductor material, which effectively creates a barrier between the two materials. This barrier imparts a rectifying current-voltage behavior when a forward bias is applied to the diode terminal. In other words, when a voltage is applied to the diode terminal, the current flows in one direction (i.e. forward bias) and is blocked in the opposite direction (i.e. reverse bias). The 1N5398G B0G diodes are able to achieve high currents because of their low Schottky barrier height and small junction area. The low Schottky barrier height produces decreased resistive losses, while the small junction area helps to increase the switching speed. This combination results in diodes that can withstand high forward surge currents. In addition, the 1N5398G B0G diodes are also capable of withstanding high peak reverse voltages, due to their high reverse power dissipation rating. The peak reverse voltage of the device should not exceed 250V. The surge current rating for the 1N5398G B0G diodes is 16A. This rating gives the device the ability to withstand high surge currents and reduce voltage stress on the junction. Finally, the 1N5398G B0G diodes also have very low forward voltage drops, which gives them improved electrical efficiency over traditional rectifier diodes. The typical forward voltage drop of the 1N5398G B0G diodes is typically 0.32V at a forward current of 1A. Overall, the 1N5398G B0G diodes are versatile components that are suitable for a wide range of applications. Their low cost, wide operating temperature range and high current capacity make them popular choices for rectifiers, switches and voltage regulation. The device is also very efficient and is capable of dissipating high peak reverse voltages and surge currents.

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