Allicdata Part #: | 1N5340B/TR12-ND |
Manufacturer Part#: |
1N5340B/TR12 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6V 5W T18 |
More Detail: | Zener Diode 6V 5W ±5% Through Hole T-18 |
DataSheet: | 1N5340B/TR12 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.25244 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 1 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 3V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5340 |
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1N5340B/TR12 is a single Zener diode of the Do-201AD series of low profile, 3.2mm Maximum height. Suggested applications for this device include surge and noise suppression, as well as voltage regulating for low voltage systems. This diode is designed to be used in a variety of applications, including automotive, medical, communications, and networking.
The 1N5340B/TR12 device contains a low profile body that is 25.4mm long and 5.1mm wide. It also has a 5mm lead spacing and a 12V Zener voltage rating. The 1N5340B/TR12 diode is a rectifier diode with a 1.3 Amps maximum current rating. It has a reverse continuous voltage rating of 12V and a reverse power dissipation limit of 0.5 watts.
The 1N5340B/TR12 diode\'s application field and its working principle are closely related. It is used for surge and noise suppression, as well as voltage regulation for low voltage systems. The diode utilizes a Zener breakdown, which is the result of electrons in the diode being accelerated to very high energy levels when an electric field is applied across the junction. This causes the electrons to collide with the lattice, releasing energy that helps to reduce the barrier between the P and N regions.
The P region of the 1N5340B/TR12 diode consists of heavily doped areas. When a reverse bias is applied across the junction, electrons start to tunnel through the potential barrier and into the N region, creating a current. This current is then able to flow through the device in a forward bias direction, and helps to reduce the voltage across the junction. When the voltage across the junction reaches a certain point, the current will stop and the diode will begin to conduct in the reverse direction.
The reverse bias of the 1N5340B/TR12 helps to maintain the voltage across the junction at a set value. This is done by allowing the electrons to flow from the P region to the N region until the voltage reaches a certain level. At this point, a small amount of current begins to flow, allowing the voltage across the junction to remain constant.
The 1N5340B/TR12 diode can also be used for current limiting and overload protection. This is because it restricts the current to safe levels when an overload is detected. The diode is able to do this by allowing a large amount of current to flow initially, but then limiting the flow of current when a certain power dissipation limit is reached.
The 1N5340B/TR12 diode is capable of providing efficient and reliable service in a variety of applications. Its reverse bias and Zener breakdown enable it to be used for voltage regulating and current limit protection, while its low profile body allows for easy installation. By understanding its application field and working principle, its users can ensure reliable and effective performance from the 1N5340B/TR12.
The specific data is subject to PDF, and the above content is for reference
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