![1N5342E3/TR8 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1N5342E3/TR8-ND |
Manufacturer Part#: |
1N5342E3/TR8 |
Price: | $ 1.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.8V 5W T18 |
More Detail: | Zener Diode 6.8V 5W ±20% Through Hole T-18 |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 1.28728 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±20% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 1 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 4.9V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5342 |
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Diodes are commonly used components in electronic circuits due to their ability to pass or stop the flow of electrical current. One of the most popular diodes type is the Zener diode. Zener diodes are voltage-regulating diodes which have a breakdown voltage which is controlled instead of being dependent on the temperature or bias current. The 1N5342E3/TR8 is a Zener diode that is specially designed for reliable surface mount operation. It is ideal for use in a variety of circuit applications where space is limited.
The 1N5342E3/TR8 has a number of beneficial features which makes it perfect for a range of electronically-controlled applications. Firstly, its 3.3V breakdown voltage nominal makes it suitable for a variety of applications that require a stable voltage source. The diode also has a maximum power dissipation of 250mW and an operating temperature range of -65°C to +175°C. Furthermore, the diode can be mounted on ceramic or FR4 substrates which helps to make it ideal for low-profile designs.
The 1N5342E3/TR8 consists of a single layer of N-type silicon substrate with a heavily doped P-type buffer layer. A p-n junction is formed at the interface of the two layers. When a voltage is applied to the device, current is able to travel through the diode. When the voltage reaches a pre-determined level, a Zener effect occurs at the P-N junction. This causes the reverse breakdown voltage to drop, allowing current to flow in, and regulating the output voltage.
The 1N5342E3/TR8 can be used in a wide range of applications, including voltage regulation, overvoltage protection, ESD protection, and surge protection. In voltage regulation applications, the diode is used in order to ensure that the output voltage is maintained at a predetermined level. This ensures that the device can maintain a stable operation, regardless of fluctuations in input voltage. The diode can also be used in order to protect vulnerable components from overvoltage or power surges.
In ESD (electrostatic discharge) protection applications, the 1N5342E3/TR8 can be used in order to protect sensitive components against static electricity which can damage or destroy them. The diode acts in the same way as it does in voltage regulation applications, but in this case, the reverse breakdown voltage is higher than the voltage of the static electricity. This allows the diode to conduct the static electricity away from the sensitive components while still maintaining an output voltage that is suitable for the device’s operation.
The 1N5342E3/TR8 is a single-pole Zener diode which is designed for surface mount operation and is ideal for use in a variety of electronic applications that require a stable voltage source. Its low-power dissipation and high breakdown voltage make it perfect for overvoltage protection, ESD protection, and other applications that require a stable output voltage.
The specific data is subject to PDF, and the above content is for reference
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