
Allicdata Part #: | 1N5347BE3/TR8-ND |
Manufacturer Part#: |
1N5347BE3/TR8 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 10V 5W T18 |
More Detail: | Zener Diode 10V 5W ±5% Through Hole T-18 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 2 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 7.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5347 |
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Diodes are semi-conductive materials that form an electrical junction between two solid states. Due to their special electronic properties, diodes are used in a wide range of applications. One such type of diode is the Zener diode, which is a special type of diode designed to operate in reverse-bias. The 1N5347BE3/TR8 is an example of a Zener diode, one which is manufactured by ON Semiconductor.
The 1N5347BE3/TR8 Zener diode is a single, low power Zener diode. It has a power rating of 500 mW, with a maximum operating temperature of 150°C. The nominal Zener voltage for this diode is 5.6V, with a maximum Zener voltage of 6.4V. The Zener impedance is typically 200 Ω at 10V and higher at 5.6V. The diode’s breakdown voltage is 8.3V with a maximum capacitance of 5pF at 1MHz.
The 1N5347BE3/TR8 Zener diode has a variety of applications. It is suitable for use in voltage regulation, as well as in voltage regulation applications in switching mode power supplies. It is also used in transient suppression and as a temperature sensor. In addition, it can be used in low power analog circuits, such as buffer and comparator circuits.
The working principle of the 1N5347BE3/TR8 Zener diode is based on the process of Zener breakdown. When a Zener diode is operated in reversed bias, the voltage applied to it becomes greater than its breakdown voltage. At this point, electrons are released from the cathode, creating a low resistance path for current to flow. This process is known as Zener breakdown and is responsible for the diode’s ability to regulate voltage.
In order to understand the operation of the 1N5347BE3/TR8 Zener diode, it is necessary to understand the V-I characteristics of the device. When forward biased, the diode exhibits a linear relationship between voltage and current. However, when operated in reverse bias, the current increases exponentially with voltage, until it reaches its Zener voltage. This creates a stabilized voltage that is independent of the current, allowing it to be used in voltage regulation applications.
The 1N5347BE3/TR8 Zener diode is a reliable, low power single Zener diode. It is suitable for use in a wide range of applications, such as voltage regulation, transient suppression, temperature sensing, and low power analog circuits. Its working principle is based on the process of Zener breakdown, which is responsible for the diode’s ability to regulate voltage.
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1N5393G A0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 1.5A ... |
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1N5348A/TR12 | Microsemi Co... | 1.37 $ | 1000 | DIODE ZENER 11V 5W T18Zen... |
1N5353E3/TR12 | Microsemi Co... | 1.37 $ | 1000 | DIODE ZENER 16V 5W T18Zen... |
1N5370A/TR12 | Microsemi Co... | 1.37 $ | 1000 | DIODE ZENER 56V 5W T18Zen... |
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