1N5351AE3/TR13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	14V
Tolerance:	±10%
Power - Max:	5W
Impedance (Max) (Zzt):	2.5 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 10.1V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 1A
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	T-18, Axial
Supplier Device Package:	T-18
Base Part Number:	1N5351

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Introduction

The 1N5351AE3/TR13 is a single Zener diode whose application field and working principle was developed to provide a high efficiency solution for voltage regulation and power management applications. This diode was designed and manufactured using a special fabrication process that allows it to operate in a very low power consumption range and achieve superior performance. This diode can also be employed in a wide range of applications, from low-power devices like cell phones and PDAs to heavy-duty equipment such as computers, industrial machinery, and medical equipment.

Application Field

This diode has a wide variety of application fields including power equipment, data handling, and digital signal processing, as well as other operational areas where voltage regulation is required. It is particularly useful for smaller equipment, as it is capable of handling much lower current than traditional Zener diodes.

Functional Principle

The 1N5351AE3/TR13 employs a unique principle of operation based on the two fundamental principles of the Zener diode: reverse breakdown and avalanche breakdown. Its operation is based on the fact that when a reverse-biased diode is subjected to a certain amount of voltage, a certain amount of current will be allowed to pass through the diode. This current is precisely the amount of current needed to cause breakdown of the junction, which is known as the reverse breakdown voltage of the diode. The breakdown voltage of this type of diode can be precisely controlled by applying the proper amount of voltage, allowing it to be used for accurate voltage regulation. In addition to its reverse breakdown capabilities, the 1N5351AE3/TR13 also utilizes avalanche breakdown voltage. This breakdown voltage occurs when the diode is subjected to higher voltage levels, which cause the electrons to be swept through the junction at a high acceleration, resulting in the release of a great amount of energy. This energy heats up the junction, allowing it to conduct more current than normal and keep the voltage at a constant level.

Advantages

The 1N5351AE3/TR13 is particularly well-suited for high-voltage and/or high-current voltage regulation applications due to its superior performance characteristics. Its reverse breakdown voltage can be accurately adjusted to provide reliable current control. Additionally, the 1N5351AE3/TR13\'s avalanche breakdown voltage eliminates the need for costly surge protection circuitry, making it a cost-effective solution for a wide range of applications. It is also highly efficient, requiring only a fraction of the power consumption to perform the same job as other Zener diodes. This makes it ideal for applications where power requirements are a major concern, such as cell phones and PDAs.

Conclusion

In conclusion, the 1N5351AE3/TR13 is a high-performance single Zener diode that can be used in a variety of applications in areas including power equipment, data handling, and digital signal processing. It has superior performance characteristics, and requires only a fraction of the power consumption to perform the same job as other Zener diodes. This makes it an ideal solution for applications where power management and voltage regulation are key requirements.

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