1N5356E3/TR12

1N5356E3/TR12 is a 2.4V Zener diode from NXP Semiconductors with a maximum operating power dissipation of 500 mW and forward voltage of 1.3V. It has a low temperature coefficient of less than -0.08%/K and is suitable for stabilizing and referencing circuits with accuracy of ±2%.

Application field

1N5356E3/TR12 is a low current Zener diode commonly used in low voltage, low power applications such as voltage monitoring and voltage stabilizing. It can also be used in overvoltage protection, circuit clamping, and voltage reference circuits. It is suitable for general electronic equipment and high-reliability industrial applications.

Working principle

1N5356E3/TR12 is a voltage-dependent diode, which works according to the principle of Zener breakdown. If a reverse bias voltage is applied to the diode, the electric field between the P-type and N-type layer will increase until the applied voltage reaches the Zener voltage. At this point, free electrons in the P-type layer will be pulled into the N-type layer by the electric field, resulting in a breakdown known as the Zener breakdown. This breakdown results in a current flow in reverse direction, and the voltage drop across the diode will become constant.

In this working state, the current through the 1N5356E3/TR12 is limited by the forward voltage drop of 1.3V, allowing the diode to provide stable, accurate and low level power dissipation. The diode also features a low temperature coefficient, making it suitable for special applications which require stability and high accuracy.

The 1N5356E3/TR12 is an economical and reliable solution for many low voltage, low power applications.