1N5361E3/TR12

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N5361E3/TR12 is a single Zener diode from the semiconductor technology family. It has a wide range of applications including but not limited to voltage regulation, voltage clamping, temperature compensating, and temperature measuring. It can also act as an amplifier in certain circuits. This diode is most commonly used in DC-DC converters, flyback and forward converters, and voltage converters.

The 1N5361E3/TR12 is a 12 volt, 5 watt Zener diode designed with a cathode end and a reverse blocking voltage. The forward voltage is less than 0.7V and the reverse voltage is greater than 12V. The power dissipation rating is 5 watts and it is capable of handling 1 watt of average power. It has an operating junction temperature range from -55 degrees to + 175 degrees Celsius.

The 1N5361E3/TR12 is available in an axial configuration and is rated for 1 A reverse current and 12V peak surge. Its capacitance is 0.02 to 0.9 pF. The power dissipation rating is 5W and the maximum temperature is 175 degrees Celsius. Its breakdown voltage is 12V and it can handle up to 28V peak reverse voltage.

The 1N5361E3/TR12 is primarily used in voltage regulation and voltage clamping. It is used in applications such as DC-DC converters, automotive electronics, overvoltage protection and transducer circuits. In a DC-DC converter, it is used as a regulator and a voltage stabilizer. The voltage regulator regulates the output voltage of the DC-DC converter. The voltage clamping feature allows the device to limit the maximum output voltage it supplies to an external circuit. In overvoltage protection circuits, the diode prevents any voltage from exceeding a certain threshold. It can also be used as an amplifier and in temperature measuring applications.

The working principle of the 1N5361E3/TR12 is relatively simple. When a forward voltage is applied across the diode, electrons in the conduction band of the semiconductor material are attracted to the anode and travel through the diode junction. The electrons are then repelled by the cathode and travel back across the diode junction. When the voltage difference exceeds the breakdown voltage of the diode, electrons start to flow in the reverse direction and voltage DC clamping occurs. This reduces the output voltage of the diode and the device is said to be in a breakdown state.

The 1N5361E3/TR12 is a popular and reliable semiconductor device used in a variety of applications. Its wide range of uses include voltage regulation, voltage clamping, overvoltage protection, transducer circuits, temperature measuring, and even as an amplifier. Its low voltage drop and high current handling capabilities make it an ideal choice for many different applications. It is important to note that this device should be operated within its operating parameters for maximum efficiency and safety.

The specific data is subject to PDF, and the above content is for reference