1N5371E3/TR13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	60V
Tolerance:	±20%
Power - Max:	5W
Impedance (Max) (Zzt):	40 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 43V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 1A
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	T-18, Axial
Supplier Device Package:	T-18
Base Part Number:	1N5371

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Overview of 1N5371E3/TR131N5371E3/TR13 is a single Zener diode that is commonly used for various applications such as voltage regulation, protection and level shifting. The diode has a compact packaging, and its small size makes it suitable for designs in which space is at a premium. It also offers excellent thermal performance and high-frequency operation.Application Field
1N5371E3/TR13 is typically used in the fields of consumer electronics, automotive and industrial applications. It can be used to reverse voltage protection and to regulate voltage in battery-powered devices. The diode is also suitable for steady-state voltage regulation, with a maximum zener voltage of 3.3V and a zener current of 1.2mA.In consumer electronic devices, 1N5371E3/TR13 is often used to protect circuits against electrostatic discharge (ESD). The diode can handle up to 5kV ESD strikes, providing a robust protection safeguard. The diode is also frequently utilized in the automotive industry, where it is used to level-shift low voltage and high current signals.Working Principle
1N5371E3/TR13 operates by virtue of the Zener effect. This occurs in a P-N junction when the electric field intensity in the junction is altered so that an electric current is allowed to flow when a voltage is applied across it. This electric field can be manipulated by changing the doping concentration in the N-type semiconductor material.In 1N5371E3/TR13, the zener voltage is controlled by the doping concentration. An increase in the doping concentration increases the zener voltage, while a decrease in the doping concentration decreases the zener voltage. The diode is designed to have a specific zener voltage, which is determined by the doping concentration.In addition to its zener voltage, 1N5371E3/TR13 also has a breakdown voltage and a leakage current. The breakdown voltage is the voltage at which the zener effect can no longer hold back the open-circuit current from the P-N junction, while the leakage current is the current that flows through the diode when the external voltage is at zero.When a voltage is applied to 1N5371E3/TR13, the electric field intensity in the P-N junction is increased, which causes the current to increase until the breakdown voltage is reached. At this point, the current increases rapidly and the device is said to be in a “Zener breakdown” mode, which is the condition in which it can regulate voltage.Conclusion
1N5371E3/TR13 is a single Zener diode that is widely used in consumer electronic devices, automotive and industrial applications. It is suitable for voltage regulation, reverse voltage protection and level shifting, with a zener voltage of 3.3V and a zener current of 1.2mA. The working principle of the diode is based on the Zener effect, which occurs when the electric field intensity in the P-N junction is altered so that an electric current is allowed to flow when a voltage is applied across it.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description